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Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F01%3APU23959%21RIV%2F2002%2FMSM%2F262202%2FN
rdf:type
skos:Concept n20:Vysledek
dcterms:description
Ohmic contacts were prepared on the Si surface of the wide band gap semiconductor n-SiC etched by Ar ECR plasma and low-frequency current-noise characteristics of ohmic contacts were investigated. Ohmic contacts were prepared on the Si surface of the wide band gap semiconductor n-SiC etched by Ar ECR plasma and low-frequency current-noise characteristics of ohmic contacts were investigated.
dcterms:title
Evaluation of Ni/n-SiC ohmic contacts by current noise measurements Evaluation of Ni/n-SiC ohmic contacts by current noise measurements
skos:prefLabel
Evaluation of Ni/n-SiC ohmic contacts by current noise measurements Evaluation of Ni/n-SiC ohmic contacts by current noise measurements
skos:notation
RIV/00216305:26220/01:PU23959!RIV/2002/MSM/262202/N
n4:strany
119-122
n4:aktivita
n16:P
n4:aktivity
P(ME 285)
n4:dodaniDat
n10:2002
n4:domaciTvurceVysledku
n21:9770690
n4:druhVysledku
n14:D
n4:duvernostUdaju
n19:S
n4:entitaPredkladatele
n6:predkladatel
n4:idSjednocenehoVysledku
679726
n4:idVysledku
RIV/00216305:26220/01:PU23959
n4:jazykVysledku
n13:eng
n4:klicovaSlova
contacts, noise, n-SiC
n4:klicoveSlovo
n5:n-SiC n5:noise n5:contacts
n4:kontrolniKodProRIV
[0364C9B8C92F]
n4:mistoKonaniAkce
Gainesville Florida USA
n4:mistoVydani
Gainesville, USA
n4:nazevZdroje
Proceedings of the 16th Int Conf Noise in Physical Systems and 1/f Fluctuations ICNF 2001
n4:obor
n9:JA
n4:pocetDomacichTvurcuVysledku
1
n4:pocetTvurcuVysledku
6
n4:pocetUcastnikuAkce
0
n4:pocetZahranicnichUcastnikuAkce
0
n4:projekt
n8:ME%20285
n4:rokUplatneniVysledku
n10:2001
n4:tvurceVysledku
Yokokura, Saburo Matsui, Toshiaki Tanuma, Nobuhisa Tacano, Munecazu Hashiguchi, Sumihisa Šikula, Josef
n4:typAkce
n15:WRD
n4:zahajeniAkce
2001-10-22+02:00
s:numberOfPages
4
n7:hasPublisher
World Scientific
n11:isbn
981-02-4677-3
n17:organizacniJednotka
26220