This HTML5 document contains 46 embedded RDF statements represented using HTML+Microdata notation.

The embedded RDF content will be recognized by any processor of HTML5 Microdata.

Namespace Prefixes

PrefixIRI
n5http://linked.opendata.cz/ontology/domain/vavai/riv/typAkce/
dctermshttp://purl.org/dc/terms/
n21http://purl.org/net/nknouf/ns/bibtex#
n10http://localhost/temp/predkladatel/
n16http://linked.opendata.cz/resource/domain/vavai/riv/tvurce/
n7http://linked.opendata.cz/resource/domain/vavai/projekt/
n13http://linked.opendata.cz/ontology/domain/vavai/
n8https://schema.org/
shttp://schema.org/
n4http://linked.opendata.cz/ontology/domain/vavai/riv/
skoshttp://www.w3.org/2004/02/skos/core#
n20http://linked.opendata.cz/resource/domain/vavai/vysledek/RIV%2F00216305%3A26220%2F01%3APU23912%21RIV%2F2002%2FGA0%2F262202%2FN/
n2http://linked.opendata.cz/resource/domain/vavai/vysledek/
rdfhttp://www.w3.org/1999/02/22-rdf-syntax-ns#
n14http://linked.opendata.cz/ontology/domain/vavai/riv/klicoveSlovo/
n19http://linked.opendata.cz/ontology/domain/vavai/riv/duvernostUdaju/
xsdhhttp://www.w3.org/2001/XMLSchema#
n15http://linked.opendata.cz/ontology/domain/vavai/riv/aktivita/
n9http://linked.opendata.cz/ontology/domain/vavai/riv/jazykVysledku/
n18http://linked.opendata.cz/ontology/domain/vavai/riv/obor/
n12http://linked.opendata.cz/ontology/domain/vavai/riv/druhVysledku/
n17http://reference.data.gov.uk/id/gregorian-year/

Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F01%3APU23912%21RIV%2F2002%2FGA0%2F262202%2FN
rdf:type
skos:Concept n13:Vysledek
dcterms:description
Random two-level or multiple-level current impulses may occur in electronic devices containing re-verse biased p-n junctions in a certain operating mode. These impulses are usually rectangular, fea-turing constant amplitude, random pulse width and pulse origin time points. This phenomenon is generally ascribed to local avalanche breakdowns originating in p-n junction defect regions called microplasma regions. Based on experiment results, a two-state model of stochastic generation-recombination process hhas been elaborated for the two-level impulse noise allowing to derive some statistical characteristics of this process. It can be shown that the distribution of the probability den-sity w(0) of the impulse separation 0 and the probability density w(1) of the impulse width 1 have exponential courses. The power spectral density of the noise current is of a G-R process type and de-pends on the particular microplasma properties. From the viewpoint of noise diagnostics, the m Random two-level or multiple-level current impulses may occur in electronic devices containing re-verse biased p-n junctions in a certain operating mode. These impulses are usually rectangular, fea-turing constant amplitude, random pulse width and pulse origin time points. This phenomenon is generally ascribed to local avalanche breakdowns originating in p-n junction defect regions called microplasma regions. Based on experiment results, a two-state model of stochastic generation-recombination process hhas been elaborated for the two-level impulse noise allowing to derive some statistical characteristics of this process. It can be shown that the distribution of the probability den-sity w(0) of the impulse separation 0 and the probability density w(1) of the impulse width 1 have exponential courses. The power spectral density of the noise current is of a G-R process type and de-pends on the particular microplasma properties. From the viewpoint of noise diagnostics, the m
dcterms:title
PN Junction Local Avalanche Breakdown Induced Microplasma Noise In Semiconductor GaAsP Diodes PN Junction Local Avalanche Breakdown Induced Microplasma Noise In Semiconductor GaAsP Diodes
skos:prefLabel
PN Junction Local Avalanche Breakdown Induced Microplasma Noise In Semiconductor GaAsP Diodes PN Junction Local Avalanche Breakdown Induced Microplasma Noise In Semiconductor GaAsP Diodes
skos:notation
RIV/00216305:26220/01:PU23912!RIV/2002/GA0/262202/N
n4:strany
193-196
n4:aktivita
n15:P
n4:aktivity
P(GA102/99/1088), P(GA103/01/1058)
n4:dodaniDat
n17:2002
n4:domaciTvurceVysledku
n16:3502465 n16:9770690
n4:druhVysledku
n12:D
n4:duvernostUdaju
n19:S
n4:entitaPredkladatele
n20:predkladatel
n4:idSjednocenehoVysledku
691319
n4:idVysledku
RIV/00216305:26220/01:PU23912
n4:jazykVysledku
n9:eng
n4:klicovaSlova
Microplasma noise, Local avalanche breakdown, LED diodes, Reliability
n4:klicoveSlovo
n14:Reliability n14:LED%20diodes n14:Microplasma%20noise n14:Local%20avalanche%20breakdown
n4:kontrolniKodProRIV
[DCCB96386765]
n4:mistoKonaniAkce
Gainesville Florida USA
n4:mistoVydani
Gainesville, Florida, USA
n4:nazevZdroje
Proceedings of ICNF 2001
n4:obor
n18:BM
n4:pocetDomacichTvurcuVysledku
2
n4:pocetTvurcuVysledku
2
n4:pocetUcastnikuAkce
0
n4:pocetZahranicnichUcastnikuAkce
0
n4:projekt
n7:GA103%2F01%2F1058 n7:GA102%2F99%2F1088
n4:rokUplatneniVysledku
n17:2001
n4:tvurceVysledku
Koktavý, Pavel Šikula, Josef
n4:typAkce
n5:WRD
n4:zahajeniAkce
2001-10-22+02:00
s:numberOfPages
4
n21:hasPublisher
University of Florida, Gainesville, Florida, USA
n8:isbn
981-02-4677-3
n10:organizacniJednotka
26220