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Statements

Subject Item
n2:RIV%2F00216305%3A26220%2F01%3APU22840%21RIV%2F2002%2FMSM%2F262202%2FN
rdf:type
skos:Concept n17:Vysledek
dcterms:description
This contribution presents experimental results obtained by deposition double-layer system made by means of electron-beam vacuum evaporation technique. We oriented our effort to short-wavelength 633 - 635 nm laser diodes. These devices are emitting close to the wavelength of traditional He-Ne lasers with an intention to use them in extended-cavity laser design for metrological purposes. The resulting reflectivities were evaluated by measuring a testing plate of GaAs and by measuring a %22modulation depth%22%22 of a coated diode emission spectra. Our best results were reflectivities well below 10-4 and the repeatibility of the deposition process in a range not exceeding 2x10-4. This contribution presents experimental results obtained by deposition double-layer system made by means of electron-beam vacuum evaporation technique. We oriented our effort to short-wavelength 633 - 635 nm laser diodes. These devices are emitting close to the wavelength of traditional He-Ne lasers with an intention to use them in extended-cavity laser design for metrological purposes. The resulting reflectivities were evaluated by measuring a testing plate of GaAs and by measuring a %22modulation depth%22%22 of a coated diode emission spectra. Our best results were reflectivities well below 10-4 and the repeatibility of the deposition process in a range not exceeding 2x10-4.
dcterms:title
Deposition and Measurement of Antireflection Coatings for Semiconductor Laser Deposition and Measurement of Antireflection Coatings for Semiconductor Laser
skos:prefLabel
Deposition and Measurement of Antireflection Coatings for Semiconductor Laser Deposition and Measurement of Antireflection Coatings for Semiconductor Laser
skos:notation
RIV/00216305:26220/01:PU22840!RIV/2002/MSM/262202/N
n4:strany
291-295
n4:aktivita
n21:Z
n4:aktivity
Z(MSM 262200011)
n4:dodaniDat
n5:2002
n4:domaciTvurceVysledku
n18:5218497
n4:druhVysledku
n15:D
n4:duvernostUdaju
n6:S
n4:entitaPredkladatele
n20:predkladatel
n4:idSjednocenehoVysledku
677147
n4:idVysledku
RIV/00216305:26220/01:PU22840
n4:jazykVysledku
n14:eng
n4:klicovaSlova
laser diode, antireflection coating, ECL
n4:klicoveSlovo
n7:laser%20diode n7:ECL n7:antireflection%20coating
n4:kontrolniKodProRIV
[C9D38C7DD390]
n4:mistoKonaniAkce
Technická 8, FEI VUT, Brno
n4:mistoVydani
Brno
n4:nazevZdroje
Proceedings of 7th conference Student FEI 2001
n4:obor
n16:JA
n4:pocetDomacichTvurcuVysledku
1
n4:pocetTvurcuVysledku
1
n4:pocetUcastnikuAkce
0
n4:pocetZahranicnichUcastnikuAkce
0
n4:rokUplatneniVysledku
n5:2001
n4:tvurceVysledku
Růžička, Bohdan
n4:typAkce
n11:CST
n4:zahajeniAkce
2001-04-19+02:00
n4:zamer
n13:MSM%20262200011
s:numberOfPages
5
n12:hasPublisher
Ing. Zdeněk Novotný CSc.
n8:isbn
80-214-1860-5
n19:organizacniJednotka
26220