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Statements

Subject Item
n2:RIV%2F00216305%3A26210%2F11%3APU95617%21RIV13-AV0-26210___
rdf:type
skos:Concept n12:Vysledek
dcterms:description
The paper describes the design and construction of an ion-atomic beam source with an optimized generation of ions for ion-beam-assisted deposition under ultrahigh vacuum (UHV) conditions. The source combines an effusion cell and an electron impact ion source and produces ion beams with ultra-low energies in the range from 30 eV to 200 eV. Decreasing ion beam energy to hyperthermal values (101 eV) without loosing optimum ionization conditions has been mainly achieved by the incorporation of an ionization chamber with a grid transparent enough for electron and ion beams. In this way the energy and current density of nitrogen ion beams in the order of 101 eV and 101 nA/cm2, respectively, have been achieved. The source is capable of growing ultrathin layers or nanostructures at ultra-low energies with a growth rate of several MLs/h. The ion-atomic beam source will be preferentially applied for the synthesis of GaN under UHV conditions. The paper describes the design and construction of an ion-atomic beam source with an optimized generation of ions for ion-beam-assisted deposition under ultrahigh vacuum (UHV) conditions. The source combines an effusion cell and an electron impact ion source and produces ion beams with ultra-low energies in the range from 30 eV to 200 eV. Decreasing ion beam energy to hyperthermal values (101 eV) without loosing optimum ionization conditions has been mainly achieved by the incorporation of an ionization chamber with a grid transparent enough for electron and ion beams. In this way the energy and current density of nitrogen ion beams in the order of 101 eV and 101 nA/cm2, respectively, have been achieved. The source is capable of growing ultrathin layers or nanostructures at ultra-low energies with a growth rate of several MLs/h. The ion-atomic beam source will be preferentially applied for the synthesis of GaN under UHV conditions.
dcterms:title
An ultra-low energy (30–200 eV) ion-atomic beam source for ion-beam-assisted deposition in ultrahigh vacuum An ultra-low energy (30–200 eV) ion-atomic beam source for ion-beam-assisted deposition in ultrahigh vacuum
skos:prefLabel
An ultra-low energy (30–200 eV) ion-atomic beam source for ion-beam-assisted deposition in ultrahigh vacuum An ultra-low energy (30–200 eV) ion-atomic beam source for ion-beam-assisted deposition in ultrahigh vacuum
skos:notation
RIV/00216305:26210/11:PU95617!RIV13-AV0-26210___
n12:predkladatel
n14:orjk%3A26210
n3:aktivita
n10:Z n10:S n10:P
n3:aktivity
P(ED1.1.00/02.0068), P(FR-TI2/736), P(KAN400100701), P(LC06040), S, Z(MSM0021630508)
n3:cisloPeriodika
8
n3:dodaniDat
n17:2013
n3:domaciTvurceVysledku
n6:4176510 n6:3777685 n6:6136168 n6:6804233 n6:9952993 n6:2404214 n6:9158383 n6:4488385
n3:druhVysledku
n19:J
n3:duvernostUdaju
n20:S
n3:entitaPredkladatele
n5:predkladatel
n3:idSjednocenehoVysledku
185532
n3:idVysledku
RIV/00216305:26210/11:PU95617
n3:jazykVysledku
n15:eng
n3:klicovaSlova
ion-atomic source, IBAD, GaN
n3:klicoveSlovo
n4:ion-atomic%20source n4:IBAD n4:GaN
n3:kodStatuVydavatele
US - Spojené státy americké
n3:kontrolniKodProRIV
[5E371BE72A24]
n3:nazevZdroje
Review of Scientific Instruments
n3:obor
n13:BM
n3:pocetDomacichTvurcuVysledku
8
n3:pocetTvurcuVysledku
8
n3:projekt
n7:ED1.1.00%2F02.0068 n7:FR-TI2%2F736 n7:LC06040 n7:KAN400100701
n3:rokUplatneniVysledku
n17:2011
n3:svazekPeriodika
82
n3:tvurceVysledku
Mach, Jindřich Voborný, Stanislav Šikola, Tomáš Dittrichová, Libuše Spousta, Jiří Zlámal, Jakub Šamořil, Tomáš Kolíbal, Miroslav
n3:zamer
n18:MSM0021630508
s:issn
0034-6748
s:numberOfPages
7
n16:organizacniJednotka
26210