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Statements

Subject Item
n2:RIV%2F00216305%3A26210%2F10%3APU88560%21RIV11-MSM-26210___
rdf:type
skos:Concept n14:Vysledek
dcterms:description
Various techniques exist which are capable of studying the material microstructure, the scanning electron microscopy (SEM), (scanning) transmission microscopy ((S)TEM) and focused ion beam (FIB) microscopy being perhaps the most known. A specific way to visualizing the microstructure of polycrystalline materials at high spatial resolution, to achieve a high contrast between grains in polycrystals and very fast data acquisition, is to use the cathode lens (CL) mode in SEM. The CL mode in the SEM enables us to observe specimens at arbitrary landing energies of the primary electrons and to detect slow but not only slow, high angle scattered electrons that carry mainly crystallographic contrast based on the electron channelling, mostly in the Mott scattering angular range. The material under investigation was a commercial purity copper prepared by equal channel angular pressing (ECAP) method using 8 passes, route Bc, namely in the as-pressed state and after annealing (in argon atmosphere, 180 C, 6 minutes Various techniques exist which are capable of studying the material microstructure, the scanning electron microscopy (SEM), (scanning) transmission microscopy ((S)TEM) and focused ion beam (FIB) microscopy being perhaps the most known. A specific way to visualizing the microstructure of polycrystalline materials at high spatial resolution, to achieve a high contrast between grains in polycrystals and very fast data acquisition, is to use the cathode lens (CL) mode in SEM. The CL mode in the SEM enables us to observe specimens at arbitrary landing energies of the primary electrons and to detect slow but not only slow, high angle scattered electrons that carry mainly crystallographic contrast based on the electron channelling, mostly in the Mott scattering angular range. The material under investigation was a commercial purity copper prepared by equal channel angular pressing (ECAP) method using 8 passes, route Bc, namely in the as-pressed state and after annealing (in argon atmosphere, 180 C, 6 minutes
dcterms:title
Strain mapping by scanning low energy electron microscopy Strain mapping by scanning low energy electron microscopy
skos:prefLabel
Strain mapping by scanning low energy electron microscopy Strain mapping by scanning low energy electron microscopy
skos:notation
RIV/00216305:26210/10:PU88560!RIV11-MSM-26210___
n3:aktivita
n4:S n4:Z
n3:aktivity
S, Z(MSM0021630508)
n3:dodaniDat
n11:2011
n3:domaciTvurceVysledku
n7:9380531 n7:6440959 n7:6142826 n7:5357020
n3:druhVysledku
n10:O
n3:duvernostUdaju
n12:S
n3:entitaPredkladatele
n6:predkladatel
n3:idSjednocenehoVysledku
290200
n3:idVysledku
RIV/00216305:26210/10:PU88560
n3:jazykVysledku
n15:eng
n3:klicovaSlova
scanning low energy electron microscopy (SLEEM), contrast of crystal orientation, microscopic strain
n3:klicoveSlovo
n16:scanning%20low%20energy%20electron%20microscopy%20%28SLEEM%29 n16:microscopic%20strain n16:contrast%20of%20crystal%20orientation
n3:kontrolniKodProRIV
[4E91FAB908B5]
n3:obor
n13:JG
n3:pocetDomacichTvurcuVysledku
4
n3:pocetTvurcuVysledku
7
n3:rokUplatneniVysledku
n11:2010
n3:tvurceVysledku
Mikmeková, Šárka Pantělejev, Libor Hovorka, Miloš Kouřil, Miloslav Müllerová, Ilona Frank, Luděk Man, Ondřej
n3:zamer
n9:MSM0021630508
n17:organizacniJednotka
26210