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Statements

Subject Item
n2:RIV%2F00216305%3A26210%2F10%3APU86906%21RIV11-MSM-26210___
rdf:type
skos:Concept n12:Vysledek
dcterms:description
The structure of as-deposited and annealed polycrystalline silicon layers has been investigated by scanning electron microscopy and x-ray diffraction. The structure of intentionally undoped layers prepared by low pressure chemical vapor deposition at a temperature of 640 C was found to be stable upon annealing at temperatures lower than about 900 C. On the other hand, primary recrystallization of the layers has been observed during annealing at temperatures in the range of 900 to 1150 C. Isochronal annealing revealed the activation energy for the primary recrystallization of undoped layers as 0.6 eV. The activation energy for diffusion of silicon self-interstitials along the grain boundaries was calculated to be 2.2 eV. The difference in grain-growth process was observed for the undoped layers grown either (i) on lightly boron-doped substrate or (ii) on the substrate heavily doped with antimony. The different grain-growth mechanism was found to be a consequence of antimony diffusion into the polycryst The structure of as-deposited and annealed polycrystalline silicon layers has been investigated by scanning electron microscopy and x-ray diffraction. The structure of intentionally undoped layers prepared by low pressure chemical vapor deposition at a temperature of 640 C was found to be stable upon annealing at temperatures lower than about 900 C. On the other hand, primary recrystallization of the layers has been observed during annealing at temperatures in the range of 900 to 1150 C. Isochronal annealing revealed the activation energy for the primary recrystallization of undoped layers as 0.6 eV. The activation energy for diffusion of silicon self-interstitials along the grain boundaries was calculated to be 2.2 eV. The difference in grain-growth process was observed for the undoped layers grown either (i) on lightly boron-doped substrate or (ii) on the substrate heavily doped with antimony. The different grain-growth mechanism was found to be a consequence of antimony diffusion into the polycryst
dcterms:title
Thermal stability of undoped polycrystalline silicon layers on antimony and boron-doped substrates Thermal stability of undoped polycrystalline silicon layers on antimony and boron-doped substrates
skos:prefLabel
Thermal stability of undoped polycrystalline silicon layers on antimony and boron-doped substrates Thermal stability of undoped polycrystalline silicon layers on antimony and boron-doped substrates
skos:notation
RIV/00216305:26210/10:PU86906!RIV11-MSM-26210___
n3:aktivita
n7:S
n3:aktivity
S
n3:cisloPeriodika
14
n3:dodaniDat
n9:2011
n3:domaciTvurceVysledku
n4:9952993 n4:6487041 n4:6804233 n4:1388428
n3:druhVysledku
n16:J
n3:duvernostUdaju
n14:S
n3:entitaPredkladatele
n17:predkladatel
n3:idSjednocenehoVysledku
292744
n3:idVysledku
RIV/00216305:26210/10:PU86906
n3:jazykVysledku
n11:eng
n3:klicovaSlova
Chemical vapor deposition, Structural properties, Polycrystalline silicon, Recrystallization, Grain growth
n3:klicoveSlovo
n6:Recrystallization n6:Chemical%20vapor%20deposition n6:Grain%20growth n6:Polycrystalline%20silicon n6:Structural%20properties
n3:kodStatuVydavatele
US - Spojené státy americké
n3:kontrolniKodProRIV
[EBF89AAFE2B6]
n3:nazevZdroje
Thin Solid Films
n3:obor
n15:BM
n3:pocetDomacichTvurcuVysledku
4
n3:pocetTvurcuVysledku
5
n3:rokUplatneniVysledku
n9:2010
n3:svazekPeriodika
518
n3:tvurceVysledku
Válek, Lukáš Špetík, R. Spousta, Jiří Lysáček, David Šikola, Tomáš
s:issn
0040-6090
s:numberOfPages
6
n10:organizacniJednotka
26210