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Statements

Subject Item
n2:RIV%2F00216305%3A26210%2F09%3APU77848%21RIV10-MSM-26210___
rdf:type
n11:Vysledek skos:Concept
dcterms:description
Deposition and oxidation of metallic gallium droplets on Si(111) was studied by angle resolved X-ray photoelectron spectroscopy. Two gallium peaks - Ga 3d and Ga 2p - were simultaneously measured in order to get an advantage of different inelastic mean free paths of photoelectrons from these two energy levels differing in binding energy by 1100 eV. Together with the angular dependent data it enhances the precision of the size characterization of Ga droplets and oxide thickness determination. A model for the calculation of theoretical intensities based on an ellipsoidal shape of droplets is presented and a simple procedure for estimation of droplet height and actual surface coverage based on measurement on a single emission angle is suggested. Deposition and oxidation of metallic gallium droplets on Si(111) was studied by angle resolved X-ray photoelectron spectroscopy. Two gallium peaks - Ga 3d and Ga 2p - were simultaneously measured in order to get an advantage of different inelastic mean free paths of photoelectrons from these two energy levels differing in binding energy by 1100 eV. Together with the angular dependent data it enhances the precision of the size characterization of Ga droplets and oxide thickness determination. A model for the calculation of theoretical intensities based on an ellipsoidal shape of droplets is presented and a simple procedure for estimation of droplet height and actual surface coverage based on measurement on a single emission angle is suggested.
dcterms:title
Characterization of oxidized gallium droplets on silicon surface: an ellipsoidal droplet shape model for angle resolved X-ray photoelectron spectroscopy analysis Characterization of oxidized gallium droplets on silicon surface: an ellipsoidal droplet shape model for angle resolved X-ray photoelectron spectroscopy analysis
skos:prefLabel
Characterization of oxidized gallium droplets on silicon surface: an ellipsoidal droplet shape model for angle resolved X-ray photoelectron spectroscopy analysis Characterization of oxidized gallium droplets on silicon surface: an ellipsoidal droplet shape model for angle resolved X-ray photoelectron spectroscopy analysis
skos:notation
RIV/00216305:26210/09:PU77848!RIV10-MSM-26210___
n3:aktivita
n13:Z n13:P
n3:aktivity
P(IAA1010413), P(KAN400100701), P(LC06040), Z(MSM0021630508)
n3:cisloPeriodika
6
n3:dodaniDat
n9:2010
n3:domaciTvurceVysledku
n7:5287081 n7:8370826 n7:8414645 n7:2404214 n7:2838451 n7:2155451 n7:6804233 n7:9040188
n3:druhVysledku
n16:J
n3:duvernostUdaju
n10:S
n3:entitaPredkladatele
n12:predkladatel
n3:idSjednocenehoVysledku
306785
n3:idVysledku
RIV/00216305:26210/09:PU77848
n3:jazykVysledku
n18:eng
n3:klicovaSlova
X-ray photoelectron spectroscopy, XPS, Gallium, Ga, Gallium Oxide, Ga2O3, Surface structures, Models, Calculations
n3:klicoveSlovo
n5:X-ray%20photoelectron%20spectroscopy n5:Ga n5:Gallium%20Oxide n5:Models n5:Calculations n5:Gallium n5:XPS n5:Ga2O3 n5:Surface%20structures
n3:kodStatuVydavatele
US - Spojené státy americké
n3:kontrolniKodProRIV
[817DEECE46F3]
n3:nazevZdroje
Thin Solid Films
n3:obor
n6:BM
n3:pocetDomacichTvurcuVysledku
8
n3:pocetTvurcuVysledku
8
n3:projekt
n4:LC06040 n4:KAN400100701 n4:IAA1010413
n3:rokUplatneniVysledku
n9:2009
n3:svazekPeriodika
517
n3:tvurceVysledku
Polčák, Josef Kolíbal, Miroslav Šikola, Tomáš Kalousek, Radek Matlocha, Tomáš Tomanec, Ondřej Dub, Petr Čechal, Jan
n3:zamer
n19:MSM0021630508
s:issn
0040-6090
s:numberOfPages
7
n17:organizacniJednotka
26210