This HTML5 document contains 57 embedded RDF statements represented using HTML+Microdata notation.

The embedded RDF content will be recognized by any processor of HTML5 Microdata.

Namespace Prefixes

PrefixIRI
dctermshttp://purl.org/dc/terms/
n10http://linked.opendata.cz/resource/domain/vavai/vysledek/RIV%2F00216305%3A26210%2F08%3APU74401%21RIV10-MSM-26210___/
n11http://localhost/temp/predkladatel/
n6http://linked.opendata.cz/resource/domain/vavai/projekt/
n4http://linked.opendata.cz/resource/domain/vavai/riv/tvurce/
n7http://linked.opendata.cz/ontology/domain/vavai/
n16http://linked.opendata.cz/resource/domain/vavai/zamer/
shttp://schema.org/
skoshttp://www.w3.org/2004/02/skos/core#
n3http://linked.opendata.cz/ontology/domain/vavai/riv/
n2http://linked.opendata.cz/resource/domain/vavai/vysledek/
rdfhttp://www.w3.org/1999/02/22-rdf-syntax-ns#
n5http://linked.opendata.cz/ontology/domain/vavai/riv/klicoveSlovo/
n19http://linked.opendata.cz/ontology/domain/vavai/riv/duvernostUdaju/
xsdhhttp://www.w3.org/2001/XMLSchema#
n15http://linked.opendata.cz/ontology/domain/vavai/riv/aktivita/
n12http://linked.opendata.cz/ontology/domain/vavai/riv/jazykVysledku/
n18http://linked.opendata.cz/ontology/domain/vavai/riv/druhVysledku/
n17http://linked.opendata.cz/ontology/domain/vavai/riv/obor/
n13http://reference.data.gov.uk/id/gregorian-year/

Statements

Subject Item
n2:RIV%2F00216305%3A26210%2F08%3APU74401%21RIV10-MSM-26210___
rdf:type
n7:Vysledek skos:Concept
dcterms:description
The influence of atomic hydrogen on the Si(100) substrate with submonolayer gallium surface phases - (2x3), (2x2) and (8x1) - as well as the deposition of gallium on monohydride terminated Si(100)-(2x1)-H surface were studied by synchrotron radiation photoelectron spectroscopy (SR-PES) and low energy electron diffraction (LEED) and compared with similar metal/Si systems. It was found that gallium deposition on the Si(100)-(2x1)-H surface at elevated temperature (400 C) leads to a complete hydrogen desorption and formation of the same gallium surface phases as on the bare Si(100)-(2x1). Exposing the Si(100) substrate with (2x3)-Ga and (2x2)-Ga surface phases to atomic hydrogen results in the formation of gallium nanoclusters, surrounded by the Si(100)-(2x1)-H surface. These clusters have more than 2 monolayers in height and cover approximately 20 - 26 % of surface, depending on the initial coverage. The results indicate that the cluster size and density may be controlled by initial Ga coverage and poss The influence of atomic hydrogen on the Si(100) substrate with submonolayer gallium surface phases - (2x3), (2x2) and (8x1) - as well as the deposition of gallium on monohydride terminated Si(100)-(2x1)-H surface were studied by synchrotron radiation photoelectron spectroscopy (SR-PES) and low energy electron diffraction (LEED) and compared with similar metal/Si systems. It was found that gallium deposition on the Si(100)-(2x1)-H surface at elevated temperature (400 C) leads to a complete hydrogen desorption and formation of the same gallium surface phases as on the bare Si(100)-(2x1). Exposing the Si(100) substrate with (2x3)-Ga and (2x2)-Ga surface phases to atomic hydrogen results in the formation of gallium nanoclusters, surrounded by the Si(100)-(2x1)-H surface. These clusters have more than 2 monolayers in height and cover approximately 20 - 26 % of surface, depending on the initial coverage. The results indicate that the cluster size and density may be controlled by initial Ga coverage and poss
dcterms:title
Atomic hydrogen induced gallium nanocluster formation on the Si(100) surface Atomic hydrogen induced gallium nanocluster formation on the Si(100) surface
skos:prefLabel
Atomic hydrogen induced gallium nanocluster formation on the Si(100) surface Atomic hydrogen induced gallium nanocluster formation on the Si(100) surface
skos:notation
RIV/00216305:26210/08:PU74401!RIV10-MSM-26210___
n3:aktivita
n15:P n15:Z
n3:aktivity
P(GEFON/06/E001), P(IAA1010413), P(KAN400100701), P(LC06040), Z(MSM0021630508)
n3:cisloPeriodika
10
n3:dodaniDat
n13:2010
n3:domaciTvurceVysledku
n4:6136168 n4:9040188 n4:3902935 n4:2404214 n4:6804233
n3:druhVysledku
n18:J
n3:duvernostUdaju
n19:S
n3:entitaPredkladatele
n10:predkladatel
n3:idSjednocenehoVysledku
357257
n3:idVysledku
RIV/00216305:26210/08:PU74401
n3:jazykVysledku
n12:eng
n3:klicovaSlova
Gallium, Ga, Silicon, Si(100), Hydrogen, Surface structure, Nanoclusters, Low energy electron diffraction (LEED), Synchrotron radiation photoelectron spectroscopy (SR-PES), Photoemission
n3:klicoveSlovo
n5:Nanoclusters n5:Gallium n5:Photoemission n5:Silicon n5:Low%20energy%20electron%20diffraction%20%28LEED%29 n5:Hydrogen n5:Surface%20structure n5:Si%28100%29 n5:Ga n5:Synchrotron%20radiation%20photoelectron%20spectroscopy%20%28SR-PES%29
n3:kodStatuVydavatele
NL - Nizozemsko
n3:kontrolniKodProRIV
[8F00B0F2E264]
n3:nazevZdroje
Surface Science
n3:obor
n17:BM
n3:pocetDomacichTvurcuVysledku
5
n3:pocetTvurcuVysledku
5
n3:projekt
n6:KAN400100701 n6:LC06040 n6:GEFON%2F06%2FE001 n6:IAA1010413
n3:rokUplatneniVysledku
n13:2008
n3:svazekPeriodika
602
n3:tvurceVysledku
Šikola, Tomáš Kolíbal, Miroslav Mach, Jindřich Potoček, Michal Čechal, Jan
n3:zamer
n16:MSM0021630508
s:issn
0039-6028
s:numberOfPages
5
n11:organizacniJednotka
26210