This HTML5 document contains 60 embedded RDF statements represented using HTML+Microdata notation.

The embedded RDF content will be recognized by any processor of HTML5 Microdata.

Namespace Prefixes

PrefixIRI
dctermshttp://purl.org/dc/terms/
n19http://localhost/temp/predkladatel/
n9http://linked.opendata.cz/resource/domain/vavai/projekt/
n7http://linked.opendata.cz/resource/domain/vavai/riv/tvurce/
n10http://linked.opendata.cz/ontology/domain/vavai/
n6http://linked.opendata.cz/resource/domain/vavai/zamer/
shttp://schema.org/
skoshttp://www.w3.org/2004/02/skos/core#
n3http://linked.opendata.cz/ontology/domain/vavai/riv/
n18http://linked.opendata.cz/resource/domain/vavai/vysledek/RIV%2F00216305%3A26210%2F07%3APU67592%21RIV07-MSM-26210___/
n2http://linked.opendata.cz/resource/domain/vavai/vysledek/
rdfhttp://www.w3.org/1999/02/22-rdf-syntax-ns#
n5http://linked.opendata.cz/ontology/domain/vavai/riv/klicoveSlovo/
n17http://linked.opendata.cz/ontology/domain/vavai/riv/duvernostUdaju/
xsdhhttp://www.w3.org/2001/XMLSchema#
n14http://linked.opendata.cz/ontology/domain/vavai/riv/aktivita/
n12http://linked.opendata.cz/ontology/domain/vavai/riv/jazykVysledku/
n16http://linked.opendata.cz/ontology/domain/vavai/riv/obor/
n15http://linked.opendata.cz/ontology/domain/vavai/riv/druhVysledku/
n4http://reference.data.gov.uk/id/gregorian-year/

Statements

Subject Item
n2:RIV%2F00216305%3A26210%2F07%3APU67592%21RIV07-MSM-26210___
rdf:type
n10:Vysledek skos:Concept
dcterms:description
Results for deposition and thermal annealing of gallium on the Si(100)-(2x1) surface achieved by synchrotron radiation photoelectron spectroscopy (SR-PES) and low energy electron diffraction (LEED) are presented. In addition to deposition of Ga on a clean surface, the influence of water adsorption on the arrangement of gallium atoms was also studied. The results on Ga deposition at a higher temperature (490 C) are consistent with a Ga ad-dimer model showing equivalent bond arrangement of all Ga atoms for coverages up to 0.5 ML. The deposition onto a surface with adsorbed water at room temperature led to a disordered gallium growth. In this case gallium atoms bind to silicon dimers already binding fragments of adsorbed water. A subsequent annealing of these layers leads to a surface structure similar to the Ga-(2x2), however, it is less ordered, probably due to the presence of silicon oxides formed from water fragments. Results for deposition and thermal annealing of gallium on the Si(100)-(2x1) surface achieved by synchrotron radiation photoelectron spectroscopy (SR-PES) and low energy electron diffraction (LEED) are presented. In addition to deposition of Ga on a clean surface, the influence of water adsorption on the arrangement of gallium atoms was also studied. The results on Ga deposition at a higher temperature (490 C) are consistent with a Ga ad-dimer model showing equivalent bond arrangement of all Ga atoms for coverages up to 0.5 ML. The deposition onto a surface with adsorbed water at room temperature led to a disordered gallium growth. In this case gallium atoms bind to silicon dimers already binding fragments of adsorbed water. A subsequent annealing of these layers leads to a surface structure similar to the Ga-(2x2), however, it is less ordered, probably due to the presence of silicon oxides formed from water fragments. Studium vrstev Ga na Si(100)-(2x1) užitím SR-PES: vliv adsorbované vody
dcterms:title
Studium vrstev Ga na Si(100)-(2x1) užitím SR-PES: vliv adsorbované vody A study of Ga layers on Si(100)-(2x1) by SR-PES: influence of adsorbed water A study of Ga layers on Si(100)-(2x1) by SR-PES: influence of adsorbed water
skos:prefLabel
Studium vrstev Ga na Si(100)-(2x1) užitím SR-PES: vliv adsorbované vody A study of Ga layers on Si(100)-(2x1) by SR-PES: influence of adsorbed water A study of Ga layers on Si(100)-(2x1) by SR-PES: influence of adsorbed water
skos:notation
RIV/00216305:26210/07:PU67592!RIV07-MSM-26210___
n3:strany
2047-2053
n3:aktivita
n14:P n14:Z
n3:aktivity
P(LC06040), Z(MSM0021630508)
n3:cisloPeriodika
9
n3:dodaniDat
n4:2007
n3:domaciTvurceVysledku
n7:8906793 n7:6136168 n7:9597719 n7:9040188 n7:4176510 n7:9952993 n7:6804233
n3:druhVysledku
n15:J
n3:duvernostUdaju
n17:S
n3:entitaPredkladatele
n18:predkladatel
n3:idSjednocenehoVysledku
408225
n3:idVysledku
RIV/00216305:26210/07:PU67592
n3:jazykVysledku
n12:eng
n3:klicovaSlova
Gallium, Ga, Silicon, Si(100), Water, Surface structure, Low energy electron diffraction (LEED), Synchrotron radiation photoelectron spectroscopy
n3:klicoveSlovo
n5:Low%20energy%20electron%20diffraction%20%28LEED%29 n5:Silicon n5:Surface%20structure n5:Water n5:Synchrotron%20radiation%20photoelectron%20spectroscopy n5:Gallium n5:Si%28100%29 n5:Ga
n3:kodStatuVydavatele
NL - Nizozemsko
n3:kontrolniKodProRIV
[38BB0A37C41A]
n3:nazevZdroje
Surface Science
n3:obor
n16:BM
n3:pocetDomacichTvurcuVysledku
7
n3:pocetTvurcuVysledku
7
n3:projekt
n9:LC06040
n3:rokUplatneniVysledku
n4:2007
n3:svazekPeriodika
601
n3:tvurceVysledku
Čechal, Jan Kostelník, Petr Voborný, Stanislav Spousta, Jiří Šikola, Tomáš Bábor, Petr Mach, Jindřich
n3:zamer
n6:MSM0021630508
s:issn
0039-6028
s:numberOfPages
7
n19:organizacniJednotka
26210