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Statements

Subject Item
n2:RIV%2F00216305%3A26210%2F07%3APU63797%21RIV07-MSM-26210___
rdf:type
n7:Vysledek skos:Concept
dcterms:description
The results of gallium deposition on the Si(111)-(7 x 7) surface at different substrate temperatures (-183, RT, 300, 490 and 530 C) as well as the influence of subsequent annealing of the prepared layers are presented. The gallium structure was monitored by low-energy electron diffraction (LEED) and synchrotron radiation photoelectron spectroscopy (SR-PES). A detailed analysis of photoelectron spectra was carried out and three different Ga 3d peak components recognized.the first one was related to the (R3xR3) R30 reconstruction, the second to gallium island bases, and the third one to metallic gallium deposited on these bases. Depending on substrate temperature either only the island bases were formed (over 490 C) or these bases were covered with extra gallium atoms in an additional layer (300 C). In the case of room (low) temperature deposition only a weak interaction of gallium with the (7x7) substrate and a non-ordered growth were found. If the gallium coverage exceeded a critical value the gallium Strukture gallia na povrchu Si(111)-(7 x 7): vliv teploty a pokrytí The results of gallium deposition on the Si(111)-(7 x 7) surface at different substrate temperatures (-183, RT, 300, 490 and 530 C) as well as the influence of subsequent annealing of the prepared layers are presented. The gallium structure was monitored by low-energy electron diffraction (LEED) and synchrotron radiation photoelectron spectroscopy (SR-PES). A detailed analysis of photoelectron spectra was carried out and three different Ga 3d peak components recognized.the first one was related to the (R3xR3) R30 reconstruction, the second to gallium island bases, and the third one to metallic gallium deposited on these bases. Depending on substrate temperature either only the island bases were formed (over 490 C) or these bases were covered with extra gallium atoms in an additional layer (300 C). In the case of room (low) temperature deposition only a weak interaction of gallium with the (7x7) substrate and a non-ordered growth were found. If the gallium coverage exceeded a critical value the gallium
dcterms:title
Strukture gallia na povrchu Si(111)-(7 x 7): vliv teploty a pokrytí Gallium structure on the Si(111)-(7 x 7) surface: influence of Ga coverage and temperature Gallium structure on the Si(111)-(7 x 7) surface: influence of Ga coverage and temperature
skos:prefLabel
Strukture gallia na povrchu Si(111)-(7 x 7): vliv teploty a pokrytí Gallium structure on the Si(111)-(7 x 7) surface: influence of Ga coverage and temperature Gallium structure on the Si(111)-(7 x 7) surface: influence of Ga coverage and temperature
skos:notation
RIV/00216305:26210/07:PU63797!RIV07-MSM-26210___
n3:strany
016011-16025
n3:aktivita
n11:Z n11:P
n3:aktivity
P(LC06040), Z(MSM0021630508)
n3:cisloPeriodika
1
n3:dodaniDat
n4:2007
n3:domaciTvurceVysledku
n10:2404214 n10:6804233 n10:8906793 n10:9040188
n3:druhVysledku
n18:J
n3:duvernostUdaju
n9:S
n3:entitaPredkladatele
n16:predkladatel
n3:idSjednocenehoVysledku
422934
n3:idVysledku
RIV/00216305:26210/07:PU63797
n3:jazykVysledku
n17:eng
n3:klicovaSlova
Gallium, Ga, Silicon, Si(100), Water, Surface structure, Low energy electron diffraction (LEED), Synchrotron radiation photoelectron spectroscopy
n3:klicoveSlovo
n6:Low%20energy%20electron%20diffraction%20%28LEED%29 n6:Si%28100%29 n6:Surface%20structure n6:Water n6:Gallium n6:Ga n6:Silicon n6:Synchrotron%20radiation%20photoelectron%20spectroscopy
n3:kodStatuVydavatele
GB - Spojené království Velké Británie a Severního Irska
n3:kontrolniKodProRIV
[66656A6DB0CC]
n3:nazevZdroje
Journal of Physics: Condensed Matter
n3:obor
n15:BM
n3:pocetDomacichTvurcuVysledku
4
n3:pocetTvurcuVysledku
4
n3:projekt
n5:LC06040
n3:rokUplatneniVysledku
n4:2007
n3:svazekPeriodika
19
n3:tvurceVysledku
Kolíbal, Miroslav Čechal, Jan Šikola, Tomáš Kostelník, Petr
n3:zamer
n13:MSM0021630508
s:issn
0953-8984
s:numberOfPages
15
n19:organizacniJednotka
26210