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Statements

Subject Item
n2:RIV%2F00216305%3A26210%2F05%3APU54249%21RIV06-MSM-26210___
rdf:type
n16:Vysledek skos:Concept
dcterms:description
PMPSi (poly(methyl-phenylsilane)) films were deposited by the spin-coating method on single crystal silicon substrates from toluene solution. Their thickness was about 200 nm. We have studied the stability of these films, which is crucial for their technological applications [1,2], by in-situ spectroscopic ellipsometry (SE) and X-ray Photoelectron Spectroscopy (XPS). This has been proved as a proper combination of monitoring methods as XPS gives direct insight into compositional and structural changes oof the polymer (5-10 nm below the surface) and the SE technique is very sensitive to the changes in PMPSi films. We have used rotating analyzer ellipsometry in the energy interval 3.4 - 4.8 eV to cover the onset of absorption starting with the lowest excitonic band involving electronic stays localized on Si. The ellipsometer is mounted on an UHV chamber, the angles of incident light can be adjusted to 45 or 67.5 . Our recent study [3] indicates that the Si-Si bonds in the polymer main chain (Si-backbo In-situ UV degradace PMPSi studovaná spektroskopickou elipsometrií, XPS a TDS. PMPSi (poly(methyl-phenylsilane)) films were deposited by the spin-coating method on single crystal silicon substrates from toluene solution. Their thickness was about 200 nm. We have studied the stability of these films, which is crucial for their technological applications [1,2], by in-situ spectroscopic ellipsometry (SE) and X-ray Photoelectron Spectroscopy (XPS). This has been proved as a proper combination of monitoring methods as XPS gives direct insight into compositional and structural changes oof the polymer (5-10 nm below the surface) and the SE technique is very sensitive to the changes in PMPSi films. We have used rotating analyzer ellipsometry in the energy interval 3.4 - 4.8 eV to cover the onset of absorption starting with the lowest excitonic band involving electronic stays localized on Si. The ellipsometer is mounted on an UHV chamber, the angles of incident light can be adjusted to 45 or 67.5 . Our recent study [3] indicates that the Si-Si bonds in the polymer main chain (Si-backbo
dcterms:title
In-situ UV degradace PMPSi studovaná spektroskopickou elipsometrií, XPS a TDS UV in-situ degradation of PMPSi analysed by spectroscopic ellipsometry, XPS and TDS UV in-situ degradation of PMPSi analysed by spectroscopic ellipsometry, XPS and TDS
skos:prefLabel
UV in-situ degradation of PMPSi analysed by spectroscopic ellipsometry, XPS and TDS In-situ UV degradace PMPSi studovaná spektroskopickou elipsometrií, XPS a TDS UV in-situ degradation of PMPSi analysed by spectroscopic ellipsometry, XPS and TDS
skos:notation
RIV/00216305:26210/05:PU54249!RIV06-MSM-26210___
n3:aktivita
n7:Z
n3:aktivity
Z(MSM0021630508)
n3:dodaniDat
n14:2006
n3:domaciTvurceVysledku
n11:9040188 n11:3218902 n11:1834282 n11:6804233 n11:5846684 n11:3502066 n11:3902935
n3:druhVysledku
n13:A
n3:duvernostUdaju
n17:S
n3:entitaPredkladatele
n18:predkladatel
n3:idSjednocenehoVysledku
548307
n3:idVysledku
RIV/00216305:26210/05:PU54249
n3:jazykVysledku
n8:eng
n3:klicovaSlova
spectroscopic ellipsometry; XPS; TDS; PMPSi
n3:klicoveSlovo
n4:XPS n4:TDS n4:spectroscopic%20ellipsometry n4:PMPSi
n3:kodPristupu
n12:L
n3:kontrolniKodProRIV
[7C352D54B187]
n3:mistoVydani
Vienna
n3:obor
n9:BM
n3:pocetDomacichTvurcuVysledku
7
n3:pocetTvurcuVysledku
8
n3:rokUplatneniVysledku
n14:2005
n3:tvurceVysledku
Čechal, Jan Humlíček, Josef Brandejsová, Eva Navrátil, Karel Potoček, Michal Šikola, Tomáš Nebojsa, Alois Bonaventurová - Zrzavecká, Olga
n3:verzeVyzkumneZpravy
1
n3:zamer
n10:MSM0021630508
n15:organizacniJednotka
26210