This HTML5 document contains 57 embedded RDF statements represented using HTML+Microdata notation.

The embedded RDF content will be recognized by any processor of HTML5 Microdata.

Namespace Prefixes

Prefix	IRI
dcterms	http://purl.org/dc/terms/
n15	http://localhost/temp/predkladatel/
n5	http://linked.opendata.cz/resource/domain/vavai/riv/tvurce/
n9	http://linked.opendata.cz/ontology/domain/vavai/
n11	http://linked.opendata.cz/resource/domain/vavai/zamer/
n14	http://linked.opendata.cz/ontology/domain/vavai/riv/kodPristupu/
skos	http://www.w3.org/2004/02/skos/core#
n3	http://linked.opendata.cz/ontology/domain/vavai/riv/
n2	http://linked.opendata.cz/resource/domain/vavai/vysledek/
n16	http://linked.opendata.cz/resource/domain/vavai/vysledek/RIV%2F00216305%3A26210%2F05%3APU54247%21RIV06-MSM-26210___/
rdf	http://www.w3.org/1999/02/22-rdf-syntax-ns#
n7	http://linked.opendata.cz/ontology/domain/vavai/riv/klicoveSlovo/
n18	http://linked.opendata.cz/ontology/domain/vavai/riv/duvernostUdaju/
xsdh	http://www.w3.org/2001/XMLSchema#
n17	http://linked.opendata.cz/ontology/domain/vavai/riv/aktivita/
n10	http://linked.opendata.cz/ontology/domain/vavai/riv/jazykVysledku/
n12	http://linked.opendata.cz/ontology/domain/vavai/riv/druhVysledku/
n4	http://linked.opendata.cz/ontology/domain/vavai/riv/obor/
n13	http://reference.data.gov.uk/id/gregorian-year/

Statements

Subject Item

n2:RIV%2F00216305%3A26210%2F05%3APU54247%21RIV06-MSM-26210___

rdf:type

skos:Concept n9:Vysledek

dcterms:description

In the presentation the ability of TOF-LEIS to monitor the growth and thermal treatment of ultra thin films of Ga on Si (111) and Si (100) substrates will be shown. The growth was carried out both at room and enhanced temperatures. As Ga tends to form droplets on these surfaces, the interpretation of TOF-LEIS spectra is not straightforward. The layer thickness of these films can be monitored by the FWHM of Ga peaks. Although in case of low energy ions the ion-surface interactions are more complicated thhan in RBS or MEIS regime (multiple scattering), FWHM dependence on the Ga coverage showed linear behaviour in a range of a few MLs (up to 9 ML for Si (111)) . An useful indicator of the growth mode was the fastness of a Si-peak intensity drop with a Ga coverage. The choice of a substrate treatment was vital for the growth mode of thin Ga layers . To interpret the experimental data and prove these results, complementary analytical methods as AFM, TDS, SR-PES and a computer simulation code were applied. In the presentation the ability of TOF-LEIS to monitor the growth and thermal treatment of ultra thin films of Ga on Si (111) and Si (100) substrates will be shown. The growth was carried out both at room and enhanced temperatures. As Ga tends to form droplets on these surfaces, the interpretation of TOF-LEIS spectra is not straightforward. The layer thickness of these films can be monitored by the FWHM of Ga peaks. Although in case of low energy ions the ion-surface interactions are more complicated thhan in RBS or MEIS regime (multiple scattering), FWHM dependence on the Ga coverage showed linear behaviour in a range of a few MLs (up to 9 ML for Si (111)) . An useful indicator of the growth mode was the fastness of a Si-peak intensity drop with a Ga coverage. The choice of a substrate treatment was vital for the growth mode of thin Ga layers . To interpret the experimental data and prove these results, complementary analytical methods as AFM, TDS, SR-PES and a computer simulation code were applied. Je prezentována schopnost metody TOF-LEIS sledovat růst tenkých vrstev gallia na substrátech Si(111) a Si(100) a vliv teploty na takto vytvořené vrstvy.

dcterms:title

Aplikace ToF LEIS k monitorování růstu a působení teploty na ultratenké vrstvy Ga. Application of ToF LEIS for Monitoring the growth and thermal treatment of Ga ultrathin films Application of ToF LEIS for Monitoring the growth and thermal treatment of Ga ultrathin films

skos:prefLabel

Application of ToF LEIS for Monitoring the growth and thermal treatment of Ga ultrathin films Application of ToF LEIS for Monitoring the growth and thermal treatment of Ga ultrathin films Aplikace ToF LEIS k monitorování růstu a působení teploty na ultratenké vrstvy Ga.

skos:notation

RIV/00216305:26210/05:PU54247!RIV06-MSM-26210___

n3:aktivita

n17:Z

n3:aktivity

Z(MSM0021630508)

n3:dodaniDat

n13:2006

n3:domaciTvurceVysledku

n5:3902935 n5:8906793 n5:2404214 n5:9597719 n5:8414645 n5:9952993 n5:4308972 n5:9040188 n5:9639195 n5:6804233

n3:druhVysledku

n12:A

n3:duvernostUdaju

n18:S

n3:entitaPredkladatele

n16:predkladatel

n3:idSjednocenehoVysledku

512909

n3:idVysledku

RIV/00216305:26210/05:PU54247

n3:jazykVysledku

n10:eng

n3:klicovaSlova

TOF; LEIS; Ga

n3:klicoveSlovo

n7:TOF n7:Ga n7:LEIS

n3:kodPristupu

n14:L

n3:kontrolniKodProRIV

[E2119698DD9C]

n3:mistoVydani

Vienna

n3:obor

n4:BM

n3:pocetDomacichTvurcuVysledku

10

n3:pocetTvurcuVysledku

12

n3:rokUplatneniVysledku

n13:2005

n3:tvurceVysledku

Čechal, Jan Potoček, Michal Průša, Stanislav Plojhar, Martin Markin, S. N. Spousta, Jiří Kolíbal, Miroslav Kostelník, Petr Bauer, P. Tomanec, Ondřej Šikola, Tomáš Bábor, Petr

n3:verzeVyzkumneZpravy

1

n3:zamer

n11:MSM0021630508

n15:organizacniJednotka

26210