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Statements

Subject Item
n2:RIV%2F00216305%3A26210%2F05%3APU54245%21RIV06-MSM-26210___
rdf:type
skos:Concept n18:Vysledek
dcterms:description
In the contribution, the in-situ analysis of GaN ultrathin films grown on Si (111) by a low-temperature technique combining a hyperthermal nitrogen ion beam and gallium atomic beam under UHV conditions will be presented. Low energy ions from the beam (10-100 eV) provides an extra kinetic energy on the surface, thus substituting a need for higher temperatures typical for other techniques (e.g. MOCVD). Additionally, this extra energy is responsible for a subsurface growth improving the layer adhesion. De eposition experiments were carried out at different operation parameters. The dependence on ion-impact energy, substrate temperature and ion-to-atom arrival ratio was examined. The ultrathin films were analyzed using XPS to find their composition, their structure- and morphology analyses were carried out by LEED and AFM, respectively. Compared to our previous experiments, the deposition setup was improved by modification of a gas distribution system and by application of nitrogen of higher purity (6-9). Příspěvek se zabývá tvorbou a analýzou ultratenkých vrstev GaN připravených metodou přímé depozice. In the contribution, the in-situ analysis of GaN ultrathin films grown on Si (111) by a low-temperature technique combining a hyperthermal nitrogen ion beam and gallium atomic beam under UHV conditions will be presented. Low energy ions from the beam (10-100 eV) provides an extra kinetic energy on the surface, thus substituting a need for higher temperatures typical for other techniques (e.g. MOCVD). Additionally, this extra energy is responsible for a subsurface growth improving the layer adhesion. De eposition experiments were carried out at different operation parameters. The dependence on ion-impact energy, substrate temperature and ion-to-atom arrival ratio was examined. The ultrathin films were analyzed using XPS to find their composition, their structure- and morphology analyses were carried out by LEED and AFM, respectively. Compared to our previous experiments, the deposition setup was improved by modification of a gas distribution system and by application of nitrogen of higher purity (6-9).
dcterms:title
Analýza ultratenkých vrstev GaN připravených metodou přímé depozice inotovým svazkem Analysis of GaN Ultrathin Films grown by Direct Ion Beam Deposition Analysis of GaN Ultrathin Films grown by Direct Ion Beam Deposition
skos:prefLabel
Analýza ultratenkých vrstev GaN připravených metodou přímé depozice inotovým svazkem Analysis of GaN Ultrathin Films grown by Direct Ion Beam Deposition Analysis of GaN Ultrathin Films grown by Direct Ion Beam Deposition
skos:notation
RIV/00216305:26210/05:PU54245!RIV06-MSM-26210___
n3:aktivita
n12:Z
n3:aktivity
Z(MSM0021630508)
n3:dodaniDat
n7:2006
n3:domaciTvurceVysledku
n4:6136168 n4:9040188 n4:4176510 n4:9952993 n4:6804233 n4:9597719 n4:3902935 n4:8906793
n3:druhVysledku
n15:A
n3:duvernostUdaju
n6:S
n3:entitaPredkladatele
n14:predkladatel
n3:idSjednocenehoVysledku
512055
n3:idVysledku
RIV/00216305:26210/05:PU54245
n3:jazykVysledku
n16:eng
n3:klicovaSlova
Gallium; GaN; direct deposition
n3:klicoveSlovo
n11:GaN n11:Gallium n11:direct%20deposition
n3:kodPristupu
n13:L
n3:kontrolniKodProRIV
[86776B759815]
n3:mistoVydani
Vienna
n3:obor
n9:BM
n3:pocetDomacichTvurcuVysledku
8
n3:pocetTvurcuVysledku
8
n3:rokUplatneniVysledku
n7:2005
n3:tvurceVysledku
Potoček, Michal Spousta, Jiří Kostelník, Petr Bábor, Petr Voborný, Stanislav Čechal, Jan Šikola, Tomáš Mach, Jindřich
n3:verzeVyzkumneZpravy
1
n3:zamer
n8:MSM0021630508
n17:organizacniJednotka
26210