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Statements

Subject Item
n2:RIV%2F00216305%3A26210%2F03%3APU41935%21RIV11-MSM-26210___
rdf:type
n16:Vysledek skos:Concept
dcterms:description
Deposition of ultra-thin GaN layers and their analysis using XPS, SIMS, TOF-LEIS. Deposition of ultra-thin GaN layers and their analysis using XPS, SIMS, TOF-LEIS.
dcterms:title
Deposition and in situ characterization of ultra-thin films Deposition and in situ characterization of ultra-thin films
skos:prefLabel
Deposition and in situ characterization of ultra-thin films Deposition and in situ characterization of ultra-thin films
skos:notation
RIV/00216305:26210/03:PU41935!RIV11-MSM-26210___
n5:aktivita
n8:P n8:V n8:Z
n5:aktivity
P(GA202/02/0767), P(ME 334), V, Z(MSM 262100002)
n5:dodaniDat
n10:2011
n5:domaciTvurceVysledku
n11:9597719 n11:6136168 n11:9639195 n11:4176510 n11:2404214 n11:9040188 n11:6804233 n11:9952993
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n21:D
n5:duvernostUdaju
n14:S
n5:entitaPredkladatele
n9:predkladatel
n5:idSjednocenehoVysledku
603093
n5:idVysledku
RIV/00216305:26210/03:PU41935
n5:jazykVysledku
n18:eng
n5:klicovaSlova
GaN, XPS, thin films
n5:klicoveSlovo
n7:GaN n7:XPS n7:thin%20films
n5:kontrolniKodProRIV
[8D92D0C85CCC]
n5:mistoKonaniAkce
Berlin
n5:mistoVydani
Berlin
n5:nazevZdroje
EVC'03 Abstracts
n5:obor
n13:BM
n5:pocetDomacichTvurcuVysledku
8
n5:pocetTvurcuVysledku
8
n5:projekt
n12:ME%20334 n12:GA202%2F02%2F0767
n5:rokUplatneniVysledku
n10:2003
n5:tvurceVysledku
Spousta, Jiří Mach, Jindřich Čechal, Jan Šikola, Tomáš Bábor, Petr Kolíbal, Miroslav Voborný, Stanislav Průša, Stanislav
n5:typAkce
n17:EUR
n5:zahajeniAkce
2003-06-23+02:00
n5:zamer
n19:MSM%20262100002
s:numberOfPages
2
n15:hasPublisher
EVC
n4:organizacniJednotka
26210