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Statements

Subject Item
n2:RIV%2F00216305%3A26110%2F00%3A22200041%21RIV%2F2001%2FMSM%2F261101%2FN
rdf:type
skos:Concept n7:Vysledek
dcterms:description
Temperature dependencies of a leakage current in normal and reverse mode are explained on the basis of a model, in which the solid state tantalum capacitor is considered as a metal - insulator - semiconductor (MIS) heterostructure. The measurement was performed from room temperature to 160°C. Temperature dependencies of a leakage current in normal and reverse mode are explained on the basis of a model, in which the solid state tantalum capacitor is considered as a metal - insulator - semiconductor (MIS) heterostructure. The measurement was performed from room temperature to 160°C.
dcterms:title
Tantalum Capacitor as a MIS Structure: Transport Characteristics Temperature Dependencies Tantalum Capacitor as a MIS Structure: Transport Characteristics Temperature Dependencies
skos:prefLabel
Tantalum Capacitor as a MIS Structure: Transport Characteristics Temperature Dependencies Tantalum Capacitor as a MIS Structure: Transport Characteristics Temperature Dependencies
skos:notation
RIV/00216305:26110/00:22200041!RIV/2001/MSM/261101/N
n4:strany
143
n4:aktivita
n6:P
n4:aktivity
P(ME 285)
n4:dodaniDat
n5:2001
n4:domaciTvurceVysledku
Šikula, Josef
n4:druhVysledku
n9:D
n4:duvernostUdaju
n13:S
n4:entitaPredkladatele
n16:predkladatel
n4:idSjednocenehoVysledku
728857
n4:idVysledku
RIV/00216305:26110/00:22200041
n4:jazykVysledku
n10:eng
n4:kontrolniKodProRIV
[1FC8BA875AA8]
n4:mistoVydani
Huntington Beach, California, USA
n4:nazevZdroje
CARTS 2000
n4:obor
n11:BM
n4:pocetDomacichTvurcuVysledku
1
n4:pocetTvurcuVysledku
6
n4:projekt
n15:ME%20285
n4:rokUplatneniVysledku
n5:2000
n4:tvurceVysledku
Šikula, Josef
s:numberOfPages
4
n14:hasPublisher
Components Technology Institute, Inc.
n8:organizacniJednotka
26110