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Namespace Prefixes

PrefixIRI
dctermshttp://purl.org/dc/terms/
n10http://localhost/temp/predkladatel/
n19http://linked.opendata.cz/resource/domain/vavai/projekt/
n4http://linked.opendata.cz/resource/domain/vavai/riv/tvurce/
n13http://linked.opendata.cz/ontology/domain/vavai/
shttp://schema.org/
skoshttp://www.w3.org/2004/02/skos/core#
n3http://linked.opendata.cz/ontology/domain/vavai/riv/
n18http://bibframe.org/vocab/
n2http://linked.opendata.cz/resource/domain/vavai/vysledek/
rdfhttp://www.w3.org/1999/02/22-rdf-syntax-ns#
n12http://linked.opendata.cz/ontology/domain/vavai/riv/klicoveSlovo/
n16http://linked.opendata.cz/ontology/domain/vavai/riv/duvernostUdaju/
xsdhhttp://www.w3.org/2001/XMLSchema#
n17http://linked.opendata.cz/resource/domain/vavai/vysledek/RIV%2F00216275%3A25310%2F14%3A39898961%21RIV15-MSM-25310___/
n11http://linked.opendata.cz/ontology/domain/vavai/riv/jazykVysledku/
n5http://linked.opendata.cz/ontology/domain/vavai/riv/aktivita/
n7http://linked.opendata.cz/ontology/domain/vavai/riv/obor/
n6http://linked.opendata.cz/ontology/domain/vavai/riv/druhVysledku/
n14http://reference.data.gov.uk/id/gregorian-year/

Statements

Subject Item
n2:RIV%2F00216275%3A25310%2F14%3A39898961%21RIV15-MSM-25310___
rdf:type
n13:Vysledek skos:Concept
dcterms:description
An advanced approach for resistive switching memory cells based on porous anodic alumina (Al2O3) membrane is reported. The effective resistive switching resulting in 6 orders of magnitude difference in resistivity between %22on%22 and %22off%22 state of the cell is achieved by specific electronic and ionic interaction between Ag nanowires filled in the membrane and an ionic conductor (AgxAsS2) deposited on the membrane by thermal evaporation. This easy and robust approach that can be exploited for deposition of other ionic conductors for novel types of memories. An advanced approach for resistive switching memory cells based on porous anodic alumina (Al2O3) membrane is reported. The effective resistive switching resulting in 6 orders of magnitude difference in resistivity between %22on%22 and %22off%22 state of the cell is achieved by specific electronic and ionic interaction between Ag nanowires filled in the membrane and an ionic conductor (AgxAsS2) deposited on the membrane by thermal evaporation. This easy and robust approach that can be exploited for deposition of other ionic conductors for novel types of memories.
dcterms:title
Down-scaling of resistive switching to nanoscale using porous anodic alumina membranes Down-scaling of resistive switching to nanoscale using porous anodic alumina membranes
skos:prefLabel
Down-scaling of resistive switching to nanoscale using porous anodic alumina membranes Down-scaling of resistive switching to nanoscale using porous anodic alumina membranes
skos:notation
RIV/00216275:25310/14:39898961!RIV15-MSM-25310___
n3:aktivita
n5:P
n3:aktivity
P(EE2.3.20.0254)
n3:cisloPeriodika
2
n3:dodaniDat
n14:2015
n3:domaciTvurceVysledku
n4:6464521 n4:1580388 n4:4364112
n3:druhVysledku
n6:J
n3:duvernostUdaju
n16:C
n3:entitaPredkladatele
n17:predkladatel
n3:idSjednocenehoVysledku
12324
n3:idVysledku
RIV/00216275:25310/14:39898961
n3:jazykVysledku
n11:eng
n3:klicovaSlova
AAO; anodic aluminium oxide; nanoscale; resistive switching
n3:klicoveSlovo
n12:anodic%20aluminium%20oxide n12:nanoscale n12:resistive%20switching n12:AAO
n3:kodStatuVydavatele
GB - Spojené království Velké Británie a Severního Irska
n3:kontrolniKodProRIV
[0533B6B7910F]
n3:nazevZdroje
Journal of Materials Chemistry C
n3:obor
n7:CA
n3:pocetDomacichTvurcuVysledku
3
n3:pocetTvurcuVysledku
4
n3:projekt
n19:EE2.3.20.0254
n3:rokUplatneniVysledku
n14:2014
n3:svazekPeriodika
2
n3:tvurceVysledku
Terabe, Kazuya Macák, Jan Kolář, Jakub Wágner, Tomáš
n3:wos
000329068000017
s:issn
2050-7526
s:numberOfPages
7
n18:doi
10.1039/c3tc31969e
n10:organizacniJednotka
25310