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Statements

Subject Item
n2:RIV%2F00216275%3A25310%2F14%3A39898941%21RIV15-TA0-25310___
rdf:type
skos:Concept n15:Vysledek
dcterms:description
In the present work, we report the structural and optical properties of sol-gel synthesized Zn0.9(Cd1-xMgx)0.1O (0 ? x ? 1.0) nanostructured films investigated by using the X-ray diffraction, scanning electron microscopy, atomic force microscopy, electrical resistivity, optical absorption and photoluminescence spectroscopic techniques. The X-ray diffraction study has revealed the hexagonal wurtzite crystal structure having favorable c-axis orientation for the increase in Mg concentration. The stress-strain calculation reveals the compressive stresses in Cd rich films whereas Mg rich films experience the tensile stress. Reduction of grain size and surface roughness has been observed with the increase in Mg concentration with more spherical grains. The AFM and SEM micrographs reveal the smooth surface morphology of the synthesized films. The magnesium rich films show high transmission in the visible and NIR region but show decrease in it with the increase in Cd concentration. The band gap increases from 3.19 to 3.40 eV with increase in Mg content. The photoluminescence measurement reveals the decrease in the defects and increase in band gap with the increase in Mg content in the films. The electrical resistivity has been found to be increased from 0.3x102 to 169.4x102 omega-cm with increase in Mg concentration. The present study reports that the compositions x=0.4 and x=0.6 have the optimized combination of optical transmittance and better electrical resistivity values in this system for their possible applications as transparent conductors. The present results provide important data for TCOs processing with an optimized content of metal dopants for better transparency and conductivity. In the present work, we report the structural and optical properties of sol-gel synthesized Zn0.9(Cd1-xMgx)0.1O (0 ? x ? 1.0) nanostructured films investigated by using the X-ray diffraction, scanning electron microscopy, atomic force microscopy, electrical resistivity, optical absorption and photoluminescence spectroscopic techniques. The X-ray diffraction study has revealed the hexagonal wurtzite crystal structure having favorable c-axis orientation for the increase in Mg concentration. The stress-strain calculation reveals the compressive stresses in Cd rich films whereas Mg rich films experience the tensile stress. Reduction of grain size and surface roughness has been observed with the increase in Mg concentration with more spherical grains. The AFM and SEM micrographs reveal the smooth surface morphology of the synthesized films. The magnesium rich films show high transmission in the visible and NIR region but show decrease in it with the increase in Cd concentration. The band gap increases from 3.19 to 3.40 eV with increase in Mg content. The photoluminescence measurement reveals the decrease in the defects and increase in band gap with the increase in Mg content in the films. The electrical resistivity has been found to be increased from 0.3x102 to 169.4x102 omega-cm with increase in Mg concentration. The present study reports that the compositions x=0.4 and x=0.6 have the optimized combination of optical transmittance and better electrical resistivity values in this system for their possible applications as transparent conductors. The present results provide important data for TCOs processing with an optimized content of metal dopants for better transparency and conductivity.
dcterms:title
Structural And Optical Properties Of Sol-gel Processed ZnCdMgO Nanostructured Films As Transparent Conductor Structural And Optical Properties Of Sol-gel Processed ZnCdMgO Nanostructured Films As Transparent Conductor
skos:prefLabel
Structural And Optical Properties Of Sol-gel Processed ZnCdMgO Nanostructured Films As Transparent Conductor Structural And Optical Properties Of Sol-gel Processed ZnCdMgO Nanostructured Films As Transparent Conductor
skos:notation
RIV/00216275:25310/14:39898941!RIV15-TA0-25310___
n3:aktivita
n18:P
n3:aktivity
P(EE2.3.30.0021), P(TE01020022)
n3:cisloPeriodika
10
n3:dodaniDat
n14:2015
n3:domaciTvurceVysledku
Pathak, Dinesh n5:4082125 n5:1580388
n3:druhVysledku
n17:J
n3:duvernostUdaju
n8:S
n3:entitaPredkladatele
n7:predkladatel
n3:idSjednocenehoVysledku
47833
n3:idVysledku
RIV/00216275:25310/14:39898941
n3:jazykVysledku
n16:eng
n3:klicovaSlova
conductivity; transparency; wide band gap semiconductors; transparent conducting oxides; Thin films
n3:klicoveSlovo
n6:wide%20band%20gap%20semiconductors n6:transparency n6:Thin%20films n6:conductivity n6:transparent%20conducting%20oxides
n3:kodStatuVydavatele
SE - Švédské království
n3:kontrolniKodProRIV
[0D4EDD3FC32D]
n3:nazevZdroje
Advanced Materials Letters
n3:obor
n4:CA
n3:pocetDomacichTvurcuVysledku
3
n3:pocetTvurcuVysledku
5
n3:projekt
n10:TE01020022 n10:EE2.3.30.0021
n3:rokUplatneniVysledku
n14:2014
n3:svazekPeriodika
5
n3:tvurceVysledku
Hromádko, Luděk Kumar, Praveen Wágner, Tomáš Pathak, Dinesh Singh, Amritpal
s:issn
0976-3961
s:numberOfPages
16
n12:organizacniJednotka
25310