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Statements

Subject Item
n2:RIV%2F00216275%3A25310%2F13%3A39896254%21RIV14-GA0-25310___
rdf:type
skos:Concept n7:Vysledek
rdfs:seeAlso
http://www.sciencedirect.com/science/article/pii/S0025540813004765
dcterms:description
Amorphous Ge20As20Se60 and Ge10As30Se60 thin films are fabricated by pulsed laser deposition. Prepared films are characterized in terms of their morphology, chemical composition, and optical properties. Special attention is given to the photosensitivity of the layers, which was studied by spectroscopic ellipsometry with as-deposited, annealed and exposed films by three different laser sources (593, 635, and 660 nm). The results show better photostability for Ge20As20Se60 thin films, where photoinduced change of optical band gap was found to be equal or less than 0.04 eV and these layers present almost zero photorefraction. Amorphous Ge20As20Se60 and Ge10As30Se60 thin films are fabricated by pulsed laser deposition. Prepared films are characterized in terms of their morphology, chemical composition, and optical properties. Special attention is given to the photosensitivity of the layers, which was studied by spectroscopic ellipsometry with as-deposited, annealed and exposed films by three different laser sources (593, 635, and 660 nm). The results show better photostability for Ge20As20Se60 thin films, where photoinduced change of optical band gap was found to be equal or less than 0.04 eV and these layers present almost zero photorefraction.
dcterms:title
Photosensitivity of pulsed laser deposited Ge20As20Se60 and Ge10As30Se60 amorphous thin films Photosensitivity of pulsed laser deposited Ge20As20Se60 and Ge10As30Se60 amorphous thin films
skos:prefLabel
Photosensitivity of pulsed laser deposited Ge20As20Se60 and Ge10As30Se60 amorphous thin films Photosensitivity of pulsed laser deposited Ge20As20Se60 and Ge10As30Se60 amorphous thin films
skos:notation
RIV/00216275:25310/13:39896254!RIV14-GA0-25310___
n7:predkladatel
n8:orjk%3A25310
n3:aktivita
n15:P
n3:aktivity
P(EE2.3.30.0058), P(GAP106/11/0506)
n3:cisloPeriodika
10
n3:dodaniDat
n18:2014
n3:domaciTvurceVysledku
n4:3446913 n4:3084930 Olivier, Mélinda Verger, Frederic Nazabal, Virginie
n3:druhVysledku
n9:J
n3:duvernostUdaju
n16:S
n3:entitaPredkladatele
n12:predkladatel
n3:idSjednocenehoVysledku
96131
n3:idVysledku
RIV/00216275:25310/13:39896254
n3:jazykVysledku
n20:eng
n3:klicovaSlova
optical properties; chalcogenides; thin films; laser deposition; amorphous materials
n3:klicoveSlovo
n6:optical%20properties n6:amorphous%20materials n6:thin%20films n6:laser%20deposition n6:chalcogenides
n3:kodStatuVydavatele
GB - Spojené království Velké Británie a Severního Irska
n3:kontrolniKodProRIV
[96A4A4A43080]
n3:nazevZdroje
Materials Research Bulletin
n3:obor
n19:JH
n3:pocetDomacichTvurcuVysledku
5
n3:pocetTvurcuVysledku
5
n3:projekt
n17:EE2.3.30.0058 n17:GAP106%2F11%2F0506
n3:rokUplatneniVysledku
n18:2013
n3:svazekPeriodika
48
n3:tvurceVysledku
Nazabal, Virginie Olivier, Mélinda Verger, Frederic Němec, Petr Hawlová, Petra
n3:wos
000324077700035
s:issn
0025-5408
s:numberOfPages
5
n14:doi
10.1016/j.materresbull.2013.05.097
n21:organizacniJednotka
25310