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Statements

Subject Item
n2:RIV%2F00216275%3A25310%2F12%3A39895338%21RIV13-GA0-25310___
rdf:type
skos:Concept n4:Vysledek
rdfs:seeAlso
http://link.springer.com/article/10.1007%2Fs10973-011-2171-8
dcterms:description
Sb2S3 crystal growth kinetics in (GeS2) (x) (Sb2S3)(1-x) thin films (x = 0.4 and 0.5) have been investigated through this study by optical microscopy in the temperature range of 575-623 K. Relative complex crystalline structures composed of submicrometer-thin Sb2S3 crystal fibers develop linearly with time. The data on temperature dependence of crystal growth rate exhibit an exponential behavior. Corresponding activation energies were found to be E (G) = 279 +/- A 7 kJ mol(-1) for x = 0.4 and E (G) = 255 +/- A 5 kJ mol(-1) for x = 0.5. These values are similar to activation energies of crystal growth in bulk glasses of the same compositions. The crystal growth is controlled by liquid-crystal interface kinetics. It seems that the 2D surface-nucleated growth is operative in this particular case. The calculated crystal growth rate for this model is in good agreement with experimental data. The crystal growth kinetic characteristic is similar for both the bulk glass and thin film for x = 0.4 composition. However, it differs considerably for x = 0.5 composition. Thermodynamic and kinetic aspects of crystal growth are discussed in terms of Jackson's theory of liquid-crystal interface. Sb2S3 crystal growth kinetics in (GeS2) (x) (Sb2S3)(1-x) thin films (x = 0.4 and 0.5) have been investigated through this study by optical microscopy in the temperature range of 575-623 K. Relative complex crystalline structures composed of submicrometer-thin Sb2S3 crystal fibers develop linearly with time. The data on temperature dependence of crystal growth rate exhibit an exponential behavior. Corresponding activation energies were found to be E (G) = 279 +/- A 7 kJ mol(-1) for x = 0.4 and E (G) = 255 +/- A 5 kJ mol(-1) for x = 0.5. These values are similar to activation energies of crystal growth in bulk glasses of the same compositions. The crystal growth is controlled by liquid-crystal interface kinetics. It seems that the 2D surface-nucleated growth is operative in this particular case. The calculated crystal growth rate for this model is in good agreement with experimental data. The crystal growth kinetic characteristic is similar for both the bulk glass and thin film for x = 0.4 composition. However, it differs considerably for x = 0.5 composition. Thermodynamic and kinetic aspects of crystal growth are discussed in terms of Jackson's theory of liquid-crystal interface.
dcterms:title
Crystal growth kinetics of Sb2S3 in Ge-Sb-S amorphous thin films Crystal growth kinetics of Sb2S3 in Ge-Sb-S amorphous thin films
skos:prefLabel
Crystal growth kinetics of Sb2S3 in Ge-Sb-S amorphous thin films Crystal growth kinetics of Sb2S3 in Ge-Sb-S amorphous thin films
skos:notation
RIV/00216275:25310/12:39895338!RIV13-GA0-25310___
n4:predkladatel
n5:orjk%3A25310
n6:aktivita
n16:P
n6:aktivity
P(GAP106/11/1152)
n6:cisloPeriodika
1
n6:dodaniDat
n12:2013
n6:domaciTvurceVysledku
n7:3988163 n7:9282076
n6:druhVysledku
n17:J
n6:duvernostUdaju
n19:S
n6:entitaPredkladatele
n18:predkladatel
n6:idSjednocenehoVysledku
129121
n6:idVysledku
RIV/00216275:25310/12:39895338
n6:jazykVysledku
n13:eng
n6:klicovaSlova
optical microscopy; Ge-Sb-S; thin films; crystal growth
n6:klicoveSlovo
n10:thin%20films n10:crystal%20growth n10:optical%20microscopy n10:Ge-Sb-S
n6:kodStatuVydavatele
DE - Spolková republika Německo
n6:kontrolniKodProRIV
[1373986FF521]
n6:nazevZdroje
Journal of Thermal Analysis and Calorimetry
n6:obor
n11:CF
n6:pocetDomacichTvurcuVysledku
2
n6:pocetTvurcuVysledku
2
n6:projekt
n9:GAP106%2F11%2F1152
n6:rokUplatneniVysledku
n12:2012
n6:svazekPeriodika
110
n6:tvurceVysledku
Barták, Jaroslav Málek, Jiří
n6:wos
000309709900036
s:issn
1388-6150
s:numberOfPages
6
n15:doi
10.1007/s10973-011-2171-8
n21:organizacniJednotka
25310