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Statements

Subject Item
n2:RIV%2F00216275%3A25310%2F10%3A39881705%21RIV11-MSM-25310___
rdf:type
skos:Concept n13:Vysledek
dcterms:description
Single crystals of a ternary system based on Bi2Te3-xSex (nominally x = 0.0-0.2) were prepared using the Bridgman technique. Samples with varying content of Se were characterized by the measurement of lattice parameters, electrical conductivity sigma (perpendicular to c) and Hall coefficient RH(B parallel to c). The actual concentration of selenium c(Se) in the samples was determined using atomic emission spectroscopy. While a small selenium concentration enhances the free hole concentration P after passing a maximum, the hole concentration decreases at higher selenium concentrations. The extreme-like dependence P = f(c(Se)) is explained in terms of a change of the native defect concentration due to the substitution of selenium atoms by tellurium ones. Single crystals of a ternary system based on Bi2Te3-xSex (nominally x = 0.0-0.2) were prepared using the Bridgman technique. Samples with varying content of Se were characterized by the measurement of lattice parameters, electrical conductivity sigma (perpendicular to c) and Hall coefficient RH(B parallel to c). The actual concentration of selenium c(Se) in the samples was determined using atomic emission spectroscopy. While a small selenium concentration enhances the free hole concentration P after passing a maximum, the hole concentration decreases at higher selenium concentrations. The extreme-like dependence P = f(c(Se)) is explained in terms of a change of the native defect concentration due to the substitution of selenium atoms by tellurium ones.
dcterms:title
Defects in Bi(2)Te(3-x)Se(x) single crystals Defects in Bi(2)Te(3-x)Se(x) single crystals
skos:prefLabel
Defects in Bi(2)Te(3-x)Se(x) single crystals Defects in Bi(2)Te(3-x)Se(x) single crystals
skos:notation
RIV/00216275:25310/10:39881705!RIV11-MSM-25310___
n3:aktivita
n16:Z
n3:aktivity
Z(MSM0021627501)
n3:cisloPeriodika
3
n3:dodaniDat
n11:2011
n3:domaciTvurceVysledku
n9:5367506 n9:3603024 n9:4377931 n9:8046352
n3:druhVysledku
n6:J
n3:duvernostUdaju
n15:S
n3:entitaPredkladatele
n14:predkladatel
n3:idSjednocenehoVysledku
253099
n3:idVysledku
RIV/00216275:25310/10:39881705
n3:jazykVysledku
n7:eng
n3:klicovaSlova
structural defects; electrical conductivity; Hall coefficient; crystals of tetradymite structure
n3:klicoveSlovo
n5:electrical%20conductivity n5:Hall%20coefficient n5:structural%20defects n5:crystals%20of%20tetradymite%20structure
n3:kodStatuVydavatele
GB - Spojené království Velké Británie a Severního Irska
n3:kontrolniKodProRIV
[88FD7E5538EA]
n3:nazevZdroje
Radiation Effects and Defects in Solids
n3:obor
n17:BM
n3:pocetDomacichTvurcuVysledku
4
n3:pocetTvurcuVysledku
5
n3:rokUplatneniVysledku
n11:2010
n3:svazekPeriodika
165
n3:tvurceVysledku
Lošťák, Petr Beneš, Ludvík Bachan, David Krejčová, Anna Drašar, Čestmír
n3:wos
000275126400003
n3:zamer
n10:MSM0021627501
s:issn
1042-0150
s:numberOfPages
5
n18:organizacniJednotka
25310