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Statements

Subject Item
n2:RIV%2F00216275%3A25310%2F09%3A00008355%21RIV12-MSM-25310___
rdf:type
n15:Vysledek skos:Concept
dcterms:description
Glasses with general formula Ag-x(As0.33Se0.67)(100-x) were studied by means of modulated differential scanning calorimetry (MDSC). conductivity and permittivity measurements and atomic force acoustic microscopy (AFAM). In the whole range of doping (x = 2-12 at.% Ag) a phase separation was supposed. The proportional amount of the ion-conductive Ag rich phase increased with the Ag content. A rapid increase (almost four orders of magnitude) in the conductivity was observed in the Ag concentration range 4-8 at.% which could be associated with the interconnection of this ion-conductive phase. The transition from a hole conductivity (at low Ag concentration) to a mixed ionic-hole conductivity at higher Ag concentration was studied by permittivity measurements. Glasses with general formula Ag-x(As0.33Se0.67)(100-x) were studied by means of modulated differential scanning calorimetry (MDSC). conductivity and permittivity measurements and atomic force acoustic microscopy (AFAM). In the whole range of doping (x = 2-12 at.% Ag) a phase separation was supposed. The proportional amount of the ion-conductive Ag rich phase increased with the Ag content. A rapid increase (almost four orders of magnitude) in the conductivity was observed in the Ag concentration range 4-8 at.% which could be associated with the interconnection of this ion-conductive phase. The transition from a hole conductivity (at low Ag concentration) to a mixed ionic-hole conductivity at higher Ag concentration was studied by permittivity measurements.
dcterms:title
Study of microstructure in Ag-x(As0.33Se0.67)(100-x) chalcogenide glasses Study of microstructure in Ag-x(As0.33Se0.67)(100-x) chalcogenide glasses
skos:prefLabel
Study of microstructure in Ag-x(As0.33Se0.67)(100-x) chalcogenide glasses Study of microstructure in Ag-x(As0.33Se0.67)(100-x) chalcogenide glasses
skos:notation
RIV/00216275:25310/09:00008355!RIV12-MSM-25310___
n4:aktivita
n14:Z n14:P
n4:aktivity
P(LC523), Z(AV0Z40500505), Z(MSM0021627501)
n4:cisloPeriodika
37-42
n4:dodaniDat
n13:2012
n4:domaciTvurceVysledku
n9:3359301 n9:6190510 n9:1580388 n9:5655730
n4:druhVysledku
n17:J
n4:duvernostUdaju
n12:S
n4:entitaPredkladatele
n16:predkladatel
n4:idSjednocenehoVysledku
344476
n4:idVysledku
RIV/00216275:25310/09:00008355
n4:jazykVysledku
n19:eng
n4:klicovaSlova
Atomic force and scanning tunneling microscopy; Chalcogenides; Fast ion conduction; Electric modulus; Relaxation; Dielectric properties; Conductivity
n4:klicoveSlovo
n8:Electric%20modulus n8:Relaxation n8:Chalcogenides n8:Atomic%20force%20and%20scanning%20tunneling%20microscopy n8:Dielectric%20properties n8:Conductivity n8:Fast%20ion%20conduction
n4:kodStatuVydavatele
NL - Nizozemsko
n4:kontrolniKodProRIV
[0A8A8E89F1F0]
n4:nazevZdroje
Journal of Non-Crystalline Solids
n4:obor
n11:CA
n4:pocetDomacichTvurcuVysledku
4
n4:pocetTvurcuVysledku
7
n4:projekt
n20:LC523
n4:rokUplatneniVysledku
n13:2009
n4:svazekPeriodika
355
n4:tvurceVysledku
Kasap, S. O. Stehlík, S. Wágner, Tomáš Bartoš, Martin Knotek, Petr Zima, Vítězslav Frumar, Miloslav
n4:wos
000270620900065
n4:zamer
n5:MSM0021627501 n5:AV0Z40500505
s:issn
0022-3093
s:numberOfPages
5
n18:doi
10.1016/j.jnoncrysol.2009.04.067
n10:organizacniJednotka
25310