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Statements

Subject Item
n2:RIV%2F00216275%3A25310%2F09%3A00008309%21RIV10-MSM-25310___
rdf:type
skos:Concept n19:Vysledek
dcterms:description
The structure of thin films of Ge2Sb2Te5 was studied by highresolution transmission electron microscopy (HRTEM) and by X-ray diffraction (XRD). The structure of thin films of Ge2Sb2Te5 was studied by highresolution transmission electron microscopy (HRTEM) and by X-ray diffraction (XRD).
dcterms:title
On the atomic structure of thin amorphous Ge-Sb-Te films On the atomic structure of thin amorphous Ge-Sb-Te films
skos:prefLabel
On the atomic structure of thin amorphous Ge-Sb-Te films On the atomic structure of thin amorphous Ge-Sb-Te films
skos:notation
RIV/00216275:25310/09:00008309!RIV10-MSM-25310___
n3:aktivita
n16:Z n16:P
n3:aktivity
P(GA203/09/0827), P(LC523), Z(MSM0021627501)
n3:cisloPeriodika
8
n3:dodaniDat
n17:2010
n3:domaciTvurceVysledku
n10:6649440 n10:1384821 n10:1580388 n10:3359301
n3:druhVysledku
n18:J
n3:duvernostUdaju
n14:S
n3:entitaPredkladatele
n8:predkladatel
n3:idSjednocenehoVysledku
331482
n3:idVysledku
RIV/00216275:25310/09:00008309
n3:jazykVysledku
n7:eng
n3:klicovaSlova
Chalcogenides; Phase change memories; Transmission electron microscopy; X-ray diffraction
n3:klicoveSlovo
n5:Chalcogenides n5:Transmission%20electron%20microscopy n5:Phase%20change%20memories n5:X-ray%20diffraction
n3:kodStatuVydavatele
DE - Spolková republika Německo
n3:kontrolniKodProRIV
[B9D1F9C6CA5E]
n3:nazevZdroje
Physica Status Solidi B-Basic Research
n3:obor
n13:CA
n3:pocetDomacichTvurcuVysledku
4
n3:pocetTvurcuVysledku
5
n3:projekt
n15:LC523 n15:GA203%2F09%2F0827
n3:rokUplatneniVysledku
n17:2009
n3:svazekPeriodika
246
n3:tvurceVysledku
Orava, Jiří Frumar, Miloslav Wágner, Tomáš Kohoutek, Tomáš Přikryl, Jan
n3:zamer
n6:MSM0021627501
s:issn
0370-1972
s:numberOfPages
4
n12:organizacniJednotka
25310