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Statements

Subject Item
n2:RIV%2F00216275%3A25310%2F08%3A00007549%21RIV09-GA0-25310___
rdf:type
skos:Concept n14:Vysledek
dcterms:description
Článek popisuje přípravu multivrstev systému chalkogenid (As-Se, Ge-Se)/polymer (PAI) a studium jejich optických vlastností v blízké infračervené oblasti elektromagnetického spektra. We report the preparation of multilayers based on polyamide-imide polymer and As-Se or Ge-Se chalcogenide thin films. Chalcogenide films of As-Se and Ge-Se systems were deposited using a thermal evaporation method periodically alternating with spin-coated Polyamide-imide films. Fifteen layers of PAI + As-Se system and nineteen layers of PAI + Ge-Se system were coated. Optical properties of prepared multilayers have been established using UV/vis/NIR and Ellipsometric spectroscopy. Both, PAI + As-Se and PAI + Ge-Se multilayer systems, exhibited the high-reflection bands centered around 830 nm and 1350 nm, respectively. The shift of the band position of PAI + Ge-Se multilayers to lower energies was caused by higher thickness of Ge-Se films. The bandwidth of reflection band of 8 PAI + 7 As-Se multilayer was 90 nm while bandwidth of PAI + Ge-Se system decreased to 70 nm because Ge-Se films have 0.1 lower refractive index against As-Se films. Design of 1D-photonic crystals based on alternating chalcogenide We report the preparation of multilayers based on polyamide-imide polymer and As-Se or Ge-Se chalcogenide thin films. Chalcogenide films of As-Se and Ge-Se systems were deposited using a thermal evaporation method periodically alternating with spin-coated Polyamide-imide films. Fifteen layers of PAI + As-Se system and nineteen layers of PAI + Ge-Se system were coated. Optical properties of prepared multilayers have been established using UV/vis/NIR and Ellipsometric spectroscopy. Both, PAI + As-Se and PAI + Ge-Se multilayer systems, exhibited the high-reflection bands centered around 830 nm and 1350 nm, respectively. The shift of the band position of PAI + Ge-Se multilayers to lower energies was caused by higher thickness of Ge-Se films. The bandwidth of reflection band of 8 PAI + 7 As-Se multilayer was 90 nm while bandwidth of PAI + Ge-Se system decreased to 70 nm because Ge-Se films have 0.1 lower refractive index against As-Se films. Design of 1D-photonic crystals based on alternating chalcogenide
dcterms:title
Multilayer planar structures prepared from chalcogenide thin films of As-Se and Ge-Se systems and polymer thin films using thermal evaporation and spin-coating techniques Planární multivrstvy přípravené z chalkogenidových tenkých vrstev systémů As-Se a Ge-Se a polymerních vrstev PAI pomocí termického napařování a rotačního lití Multilayer planar structures prepared from chalcogenide thin films of As-Se and Ge-Se systems and polymer thin films using thermal evaporation and spin-coating techniques
skos:prefLabel
Multilayer planar structures prepared from chalcogenide thin films of As-Se and Ge-Se systems and polymer thin films using thermal evaporation and spin-coating techniques Planární multivrstvy přípravené z chalkogenidových tenkých vrstev systémů As-Se a Ge-Se a polymerních vrstev PAI pomocí termického napařování a rotačního lití Multilayer planar structures prepared from chalcogenide thin films of As-Se and Ge-Se systems and polymer thin films using thermal evaporation and spin-coating techniques
skos:notation
RIV/00216275:25310/08:00007549!RIV09-GA0-25310___
n3:aktivita
n8:P n8:Z
n3:aktivity
P(GP203/08/P204), P(LC523), Z(MSM0021627501)
n3:cisloPeriodika
2-9
n3:dodaniDat
n10:2009
n3:domaciTvurceVysledku
n6:3359301 n6:6649440 n6:3110869 n6:1580388
n3:druhVysledku
n4:J
n3:duvernostUdaju
n19:S
n3:entitaPredkladatele
n9:predkladatel
n3:idSjednocenehoVysledku
381128
n3:idVysledku
RIV/00216275:25310/08:00007549
n3:jazykVysledku
n13:eng
n3:klicovaSlova
photonic bandgap; ellipsometry; spin-coating; infrared properties
n3:klicoveSlovo
n7:photonic%20bandgap n7:ellipsometry n7:spin-coating n7:infrared%20properties
n3:kodStatuVydavatele
NL - Nizozemsko
n3:kontrolniKodProRIV
[ED0A434A928B]
n3:nazevZdroje
Journal of Non-Crystalline Solids
n3:obor
n18:CA
n3:pocetDomacichTvurcuVysledku
4
n3:pocetTvurcuVysledku
7
n3:projekt
n12:LC523 n12:GP203%2F08%2FP204
n3:rokUplatneniVysledku
n10:2008
n3:svazekPeriodika
354
n3:tvurceVysledku
Krbal, Miloš Orava, Jiří Wágner, Tomáš Ilavsky, Juraj Kohoutek, Tomáš Frumar, Miloslav Vlček, Milan
n3:zamer
n17:MSM0021627501
s:issn
0022-3093
s:numberOfPages
4
n16:organizacniJednotka
25310