This HTML5 document contains 50 embedded RDF statements represented using HTML+Microdata notation.

The embedded RDF content will be recognized by any processor of HTML5 Microdata.

Namespace Prefixes

PrefixIRI
dctermshttp://purl.org/dc/terms/
n16http://localhost/temp/predkladatel/
n8http://linked.opendata.cz/resource/domain/vavai/riv/tvurce/
n6http://linked.opendata.cz/resource/domain/vavai/projekt/
n10http://linked.opendata.cz/ontology/domain/vavai/
shttp://schema.org/
skoshttp://www.w3.org/2004/02/skos/core#
n3http://linked.opendata.cz/ontology/domain/vavai/riv/
n2http://linked.opendata.cz/resource/domain/vavai/vysledek/
rdfhttp://www.w3.org/1999/02/22-rdf-syntax-ns#
n17http://linked.opendata.cz/resource/domain/vavai/vysledek/RIV%2F00216275%3A25310%2F04%3A00001530%21RIV08-MSM-25310___/
n12http://linked.opendata.cz/ontology/domain/vavai/riv/klicoveSlovo/
n11http://linked.opendata.cz/ontology/domain/vavai/riv/duvernostUdaju/
xsdhhttp://www.w3.org/2001/XMLSchema#
n18http://linked.opendata.cz/ontology/domain/vavai/riv/aktivita/
n14http://linked.opendata.cz/ontology/domain/vavai/riv/jazykVysledku/
n15http://linked.opendata.cz/ontology/domain/vavai/riv/druhVysledku/
n13http://linked.opendata.cz/ontology/domain/vavai/riv/obor/
n4http://reference.data.gov.uk/id/gregorian-year/

Statements

Subject Item
n2:RIV%2F00216275%3A25310%2F04%3A00001530%21RIV08-MSM-25310___
rdf:type
n10:Vysledek skos:Concept
dcterms:description
Thin amorphous GexSe1-x, x = 0.22-0.28, films were prepared by pulsed laser deposition technique. The photo- and thermally-induced changes of structure and optical gap (Egopt ) of the films were studied and discussed. The exposure and annealing causes bleaching of films, the Egopt is increasing. The structure is influenced only a little by exposure, the annealing causes decrease of Raman bands amplitudes corresponding to Ge-Ge, Se-Se bonds and to structural units similar to (GeSe)n. This fact can be ascribed to chemical reactions between fragments formed during pulsed laser deposition. Thin amorphous GexSe1-x, x = 0.22-0.28, films were prepared by pulsed laser deposition technique. The photo- and thermally-induced changes of structure and optical gap (Egopt ) of the films were studied and discussed. The exposure and annealing causes bleaching of films, the Egopt is increasing. The structure is influenced only a little by exposure, the annealing causes decrease of Raman bands amplitudes corresponding to Ge-Ge, Se-Se bonds and to structural units similar to (GeSe)n. This fact can be ascribed to chemical reactions between fragments formed during pulsed laser deposition. Amorfní tenké vrstvy Ge-Se připravené pulsní laserovou depozicí
dcterms:title
Amorfní tenké vrstvy Ge-Se připravené pulsní laserovou depozicí Amorphous Ge-Se thin films prepared by pulsed laser deposition Amorphous Ge-Se thin films prepared by pulsed laser deposition
skos:prefLabel
Amorfní tenké vrstvy Ge-Se připravené pulsní laserovou depozicí Amorphous Ge-Se thin films prepared by pulsed laser deposition Amorphous Ge-Se thin films prepared by pulsed laser deposition
skos:notation
RIV/00216275:25310/04:00001530!RIV08-MSM-25310___
n3:strany
877-885
n3:aktivita
n18:P
n3:aktivity
P(LN00A028)
n3:cisloPeriodika
9
n3:dodaniDat
n4:2008
n3:domaciTvurceVysledku
n8:4199693 n8:8573476 n8:3110869 n8:3446913 n8:3359301
n3:druhVysledku
n15:J
n3:duvernostUdaju
n11:S
n3:entitaPredkladatele
n17:predkladatel
n3:idSjednocenehoVysledku
554023
n3:idVysledku
RIV/00216275:25310/04:00001530
n3:jazykVysledku
n14:eng
n3:klicovaSlova
pulsed laser deposition; amorphous chalcogenides; thin films
n3:klicoveSlovo
n12:amorphous%20chalcogenides n12:thin%20films n12:pulsed%20laser%20deposition
n3:kodStatuVydavatele
GB - Spojené království Velké Británie a Severního Irska
n3:kontrolniKodProRIV
[3E446AB06844]
n3:nazevZdroje
Philosophical Magazine
n3:obor
n13:CA
n3:pocetDomacichTvurcuVysledku
5
n3:pocetTvurcuVysledku
6
n3:projekt
n6:LN00A028
n3:rokUplatneniVysledku
n4:2004
n3:svazekPeriodika
84
n3:tvurceVysledku
Němec, Petr Jedelský, Jaroslav Frumar, Miloslav Vlček, Milan Černošek, Zdeněk Štábl, Marek
s:issn
1478-6443
s:numberOfPages
9
n16:organizacniJednotka
25310