This HTML5 document contains 41 embedded RDF statements represented using HTML+Microdata notation.

The embedded RDF content will be recognized by any processor of HTML5 Microdata.

Namespace Prefixes

PrefixIRI
dctermshttp://purl.org/dc/terms/
n12http://linked.opendata.cz/resource/domain/vavai/vysledek/RIV%2F00216224%3A14740%2F14%3A00079942%21RIV15-MSM-14740___/
n11http://localhost/temp/predkladatel/
n4http://linked.opendata.cz/resource/domain/vavai/riv/tvurce/
n17http://linked.opendata.cz/ontology/domain/vavai/riv/podDruhVysledku/
n7http://linked.opendata.cz/ontology/domain/vavai/
shttp://schema.org/
skoshttp://www.w3.org/2004/02/skos/core#
n3http://linked.opendata.cz/ontology/domain/vavai/riv/
n2http://linked.opendata.cz/resource/domain/vavai/vysledek/
rdfhttp://www.w3.org/1999/02/22-rdf-syntax-ns#
n6http://linked.opendata.cz/ontology/domain/vavai/riv/klicoveSlovo/
n5http://linked.opendata.cz/ontology/domain/vavai/riv/duvernostUdaju/
xsdhhttp://www.w3.org/2001/XMLSchema#
n15http://linked.opendata.cz/ontology/domain/vavai/riv/aktivita/
n14http://linked.opendata.cz/ontology/domain/vavai/riv/jazykVysledku/
n16http://linked.opendata.cz/ontology/domain/vavai/riv/obor/
n13http://reference.data.gov.uk/id/gregorian-year/

Statements

Subject Item
n2:RIV%2F00216224%3A14740%2F14%3A00079942%21RIV15-MSM-14740___
rdf:type
n7:Vysledek skos:Concept
dcterms:description
*Utilization of characterization methods for development of *Al/GaN epitaxial technology. Evaluating the feasibility of MOCVD epitaxial growth of HEMT materials including structure characteristics and characterization methods. Perform characterization of optical properties of *Al/GaN layered system and propose metrology for layer thickness estimation. Perform correlation of measurement with FTIR system. Develop x-ray methods for characterization of defects in epitaxial *Al/GaN layers. Develop x-ray methods for fast analysis of composition of epitaxial *Al/GaN layers. *Utilization of characterization methods for development of *Al/GaN epitaxial technology. Evaluating the feasibility of MOCVD epitaxial growth of HEMT materials including structure characteristics and characterization methods. Perform characterization of optical properties of *Al/GaN layered system and propose metrology for layer thickness estimation. Perform correlation of measurement with FTIR system. Develop x-ray methods for characterization of defects in epitaxial *Al/GaN layers. Develop x-ray methods for fast analysis of composition of epitaxial *Al/GaN layers.
dcterms:title
Metrology of epitaxial layers *GaN Metrology of epitaxial layers *GaN
skos:prefLabel
Metrology of epitaxial layers *GaN Metrology of epitaxial layers *GaN
skos:notation
RIV/00216224:14740/14:00079942!RIV15-MSM-14740___
n3:aktivita
n15:N
n3:aktivity
N
n3:dodaniDat
n13:2015
n3:domaciTvurceVysledku
n4:7105711 Wang, Chennan n4:8635390 n4:1834282
n3:druhVysledku
n17:V%2FS
n3:duvernostUdaju
n5:C
n3:entitaPredkladatele
n12:predkladatel
n3:idSjednocenehoVysledku
29025
n3:idVysledku
RIV/00216224:14740/14:00079942
n3:jazykVysledku
n14:eng
n3:klicovaSlova
layered structures; GaN; AlGaN; silicon
n3:klicoveSlovo
n6:layered%20structures n6:GaN n6:silicon n6:AlGaN
n3:kontrolniKodProRIV
[9CB2F8BAA38A]
n3:mistoVydani
Masarykova univerzita, Brno
n3:objednatelVyzkumneZpravy
ONSEMI
n3:obor
n16:BM
n3:pocetDomacichTvurcuVysledku
4
n3:pocetTvurcuVysledku
4
n3:rokUplatneniVysledku
n13:2014
n3:tvurceVysledku
Caha, Ondřej Wang, Chennan Humlíček, Josef Münz, Filip
n3:verzeVyzkumneZpravy
Report LDDA 2014
s:numberOfPages
67
n11:organizacniJednotka
14740