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Statements

Subject Item
n2:RIV%2F00216224%3A14740%2F14%3A00079915%21RIV15-MSM-14740___
rdf:type
n14:Vysledek skos:Concept
rdfs:seeAlso
http://proceedings.spiedigitallibrary.org/proceeding.aspx?articleid=1904541
dcterms:description
Advanced X-ray imaging techniques of weakly absorbing structures require an increase of the sensitivity to small refractive angles considering that they are based more on coherent X-ray phase contrast than on X-ray absorption one. Simulations of diffraction properties of germanium (Ge) X-ray crystal monochromators and of analyzer based imaging (ABI) method were performed for various asymmetry factors and several lattice plane orientations using an X-ray energy range from 8 keV to 20 keV. Using an appropriate phase/amplitude retrieval method one can recover the phase information from the ABI image, which is directly proportional to the projected electron density. We are using germanium based optics for X-ray imaging or image magnification. The use of Ge crystals offers several advantages over silicon crystals. The integrated reflectivity of Ge crystals is two to three times larger than that of Si crystals. Advanced X-ray imaging techniques of weakly absorbing structures require an increase of the sensitivity to small refractive angles considering that they are based more on coherent X-ray phase contrast than on X-ray absorption one. Simulations of diffraction properties of germanium (Ge) X-ray crystal monochromators and of analyzer based imaging (ABI) method were performed for various asymmetry factors and several lattice plane orientations using an X-ray energy range from 8 keV to 20 keV. Using an appropriate phase/amplitude retrieval method one can recover the phase information from the ABI image, which is directly proportional to the projected electron density. We are using germanium based optics for X-ray imaging or image magnification. The use of Ge crystals offers several advantages over silicon crystals. The integrated reflectivity of Ge crystals is two to three times larger than that of Si crystals.
dcterms:title
Simulations and surface quality testing of high asymmetry angle X-ray crystal monochromators for advanced X-ay imaging applications Simulations and surface quality testing of high asymmetry angle X-ray crystal monochromators for advanced X-ay imaging applications
skos:prefLabel
Simulations and surface quality testing of high asymmetry angle X-ray crystal monochromators for advanced X-ay imaging applications Simulations and surface quality testing of high asymmetry angle X-ray crystal monochromators for advanced X-ay imaging applications
skos:notation
RIV/00216224:14740/14:00079915!RIV15-MSM-14740___
n3:aktivita
n22:S n22:P
n3:aktivity
P(ED1.1.00/02.0068), S
n3:dodaniDat
n6:2015
n3:domaciTvurceVysledku
n19:2966174
n3:druhVysledku
n20:D
n3:duvernostUdaju
n7:S
n3:entitaPredkladatele
n9:predkladatel
n3:idSjednocenehoVysledku
45020
n3:idVysledku
RIV/00216224:14740/14:00079915
n3:jazykVysledku
n15:eng
n3:klicovaSlova
Crystals; Monochromators; Simulations; Surface quality testing; X-ray imaging; X-rays; Germanium; Single point diamond turning; Polishing; Reflectivity
n3:klicoveSlovo
n5:Germanium n5:Reflectivity n5:Crystals n5:X-ray%20imaging n5:Polishing n5:X-rays n5:Single%20point%20diamond%20turning n5:Surface%20quality%20testing n5:Monochromators n5:Simulations
n3:kontrolniKodProRIV
[EF06A11C6D3F]
n3:mistoKonaniAkce
San Diego
n3:mistoVydani
USA
n3:nazevZdroje
Advances in X-Ray/EUV Optics and Components IX
n3:obor
n8:BM
n3:pocetDomacichTvurcuVysledku
1
n3:pocetTvurcuVysledku
10
n3:projekt
n16:ED1.1.00%2F02.0068
n3:rokUplatneniVysledku
n6:2014
n3:tvurceVysledku
Vagovič, P. Mikulík, Petr Ferrari, C. Demydenko, M. Zápražný, Z. Mikloška, M. Dobročka, E. Korytár, D. Šiffalovič, P. Jergel, M.
n3:typAkce
n23:WRD
n3:wos
000343877600030
n3:zahajeniAkce
2014-10-08+02:00
s:issn
0277-786X
s:numberOfPages
14
n13:doi
10.1117/12.2061353
n21:hasPublisher
SPIE-INT SOC OPTICAL ENGINEERING
n18:isbn
9781628412345
n12:organizacniJednotka
14740