This HTML5 document contains 52 embedded RDF statements represented using HTML+Microdata notation.

The embedded RDF content will be recognized by any processor of HTML5 Microdata.

Namespace Prefixes

PrefixIRI
n12http://linked.opendata.cz/resource/domain/vavai/vysledek/RIV%2F00216224%3A14740%2F14%3A00079372%21RIV15-MSM-14740___/
dctermshttp://purl.org/dc/terms/
n15http://localhost/temp/predkladatel/
n20http://linked.opendata.cz/resource/domain/vavai/projekt/
n13http://linked.opendata.cz/resource/domain/vavai/riv/tvurce/
n18http://linked.opendata.cz/ontology/domain/vavai/
shttp://schema.org/
rdfshttp://www.w3.org/2000/01/rdf-schema#
skoshttp://www.w3.org/2004/02/skos/core#
n3http://linked.opendata.cz/ontology/domain/vavai/riv/
n16http://bibframe.org/vocab/
n2http://linked.opendata.cz/resource/domain/vavai/vysledek/
rdfhttp://www.w3.org/1999/02/22-rdf-syntax-ns#
n4http://linked.opendata.cz/ontology/domain/vavai/riv/klicoveSlovo/
n9http://linked.opendata.cz/ontology/domain/vavai/riv/duvernostUdaju/
xsdhhttp://www.w3.org/2001/XMLSchema#
n19http://linked.opendata.cz/ontology/domain/vavai/riv/jazykVysledku/
n5http://linked.opendata.cz/ontology/domain/vavai/riv/aktivita/
n10http://linked.opendata.cz/ontology/domain/vavai/riv/obor/
n7http://linked.opendata.cz/ontology/domain/vavai/riv/druhVysledku/
n17http://reference.data.gov.uk/id/gregorian-year/

Statements

Subject Item
n2:RIV%2F00216224%3A14740%2F14%3A00079372%21RIV15-MSM-14740___
rdf:type
skos:Concept n18:Vysledek
rdfs:seeAlso
http://journals.iucr.org/j/issues/2014/06/00/rg5074/rg5074.pdf
dcterms:description
The structure and composition of Bi2Te3-delta topological insulator layers grown by molecular beam epitaxy is studied as a function of beam flux composition. It is demonstrated that, depending on the Te/Bi2Te3 flux ratio, different layer compositions are obtained corresponding to a Te deficit delta varying between 0 and 1. On the basis of X-ray diffraction analysis and a theoretical description using a random stacking model, it is shown that for delta >= 0 the structure of the epilayers is described well by a random stacking of Te-Bi-Te-Bi-Te quintuple layers and Bi-Bi bilayers sharing the same basic hexagonal lattice structure. The random stacking model accounts for the observed surface step structure of the layers and compares very well with the measured X-ray data, from which the lattice parameters a and c as a function of the chemical composition were deduced. The structure and composition of Bi2Te3-delta topological insulator layers grown by molecular beam epitaxy is studied as a function of beam flux composition. It is demonstrated that, depending on the Te/Bi2Te3 flux ratio, different layer compositions are obtained corresponding to a Te deficit delta varying between 0 and 1. On the basis of X-ray diffraction analysis and a theoretical description using a random stacking model, it is shown that for delta >= 0 the structure of the epilayers is described well by a random stacking of Te-Bi-Te-Bi-Te quintuple layers and Bi-Bi bilayers sharing the same basic hexagonal lattice structure. The random stacking model accounts for the observed surface step structure of the layers and compares very well with the measured X-ray data, from which the lattice parameters a and c as a function of the chemical composition were deduced.
dcterms:title
Structure and composition of bismuth telluride topological insulators grown by molecular beam epitaxy Structure and composition of bismuth telluride topological insulators grown by molecular beam epitaxy
skos:prefLabel
Structure and composition of bismuth telluride topological insulators grown by molecular beam epitaxy Structure and composition of bismuth telluride topological insulators grown by molecular beam epitaxy
skos:notation
RIV/00216224:14740/14:00079372!RIV15-MSM-14740___
n3:aktivita
n5:P n5:I
n3:aktivity
I, P(GA14-08124S)
n3:cisloPeriodika
December
n3:dodaniDat
n17:2015
n3:domaciTvurceVysledku
n13:7105711
n3:druhVysledku
n7:J
n3:duvernostUdaju
n9:S
n3:entitaPredkladatele
n12:predkladatel
n3:idSjednocenehoVysledku
47895
n3:idVysledku
RIV/00216224:14740/14:00079372
n3:jazykVysledku
n19:eng
n3:klicovaSlova
X-RAY-DIFFRACTION; SINGLE DIRAC CONE; SURFACE-STATES; BI2TE3 FILMS; THIN-FILMS; PHASES; SYSTEM; BITE; SI
n3:klicoveSlovo
n4:SINGLE%20DIRAC%20CONE n4:BI2TE3%20FILMS n4:PHASES n4:THIN-FILMS n4:X-RAY-DIFFRACTION n4:SI n4:BITE n4:SURFACE-STATES n4:SYSTEM
n3:kodStatuVydavatele
US - Spojené státy americké
n3:kontrolniKodProRIV
[BF70F91E527B]
n3:nazevZdroje
Journal of Applied Crystallography
n3:obor
n10:BM
n3:pocetDomacichTvurcuVysledku
1
n3:pocetTvurcuVysledku
6
n3:projekt
n20:GA14-08124S
n3:rokUplatneniVysledku
n17:2014
n3:svazekPeriodika
47
n3:tvurceVysledku
Springholz, Günter Volobuev, Valentine Steiner, Hubert Holý, Václav Bauer, Guenther Caha, Ondřej
n3:wos
000345877900010
s:issn
0021-8898
s:numberOfPages
12
n16:doi
10.1107/S1600576714020445
n15:organizacniJednotka
14740