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Statements

Subject Item
n2:RIV%2F00216224%3A14740%2F14%3A00074283%21RIV15-GA0-14740___
rdf:type
skos:Concept n21:Vysledek
rdfs:seeAlso
http://iopscience.iop.org/1402-4896/2014/T162/014007/article
dcterms:description
We report results of Raman and ellipsometric spectroscopy of the topological insulators Bi2Te3 and Bi2Se3 grown by molecular beam epitaxy on BaF2 (111) substrates. Surfaces and interfaces of the films are probed by Raman scattering from the front and back sides of the samples, which is possible owing to the transparent substrate. Surface modifications induced by intense illumination with exciting laser light have been detected, with excess tellurium at the surface during and after exposure. We also report data for thin epilayers containing a fractional number of unit cells and/or incomplete Bi2Te3 and Bi2Se3 quintuples. We have used spectroellipsometric measurements to obtain response functions and have derived the penetration depth of light in the 1.0–6.5 eV range. We report results of Raman and ellipsometric spectroscopy of the topological insulators Bi2Te3 and Bi2Se3 grown by molecular beam epitaxy on BaF2 (111) substrates. Surfaces and interfaces of the films are probed by Raman scattering from the front and back sides of the samples, which is possible owing to the transparent substrate. Surface modifications induced by intense illumination with exciting laser light have been detected, with excess tellurium at the surface during and after exposure. We also report data for thin epilayers containing a fractional number of unit cells and/or incomplete Bi2Te3 and Bi2Se3 quintuples. We have used spectroellipsometric measurements to obtain response functions and have derived the penetration depth of light in the 1.0–6.5 eV range.
dcterms:title
Raman and interband optical spectra of epitaxial layers of the topological insulators Bi2Te3 and Bi2Se3 on BaF2 substrates Raman and interband optical spectra of epitaxial layers of the topological insulators Bi2Te3 and Bi2Se3 on BaF2 substrates
skos:prefLabel
Raman and interband optical spectra of epitaxial layers of the topological insulators Bi2Te3 and Bi2Se3 on BaF2 substrates Raman and interband optical spectra of epitaxial layers of the topological insulators Bi2Te3 and Bi2Se3 on BaF2 substrates
skos:notation
RIV/00216224:14740/14:00074283!RIV15-GA0-14740___
n3:aktivita
n9:P
n3:aktivity
P(ED1.1.00/02.0068), P(GAP204/12/0595)
n3:dodaniDat
n6:2015
n3:domaciTvurceVysledku
n14:7105711 n14:1834282 n14:4700570 n14:1647652
n3:druhVysledku
n16:D
n3:duvernostUdaju
n4:S
n3:entitaPredkladatele
n5:predkladatel
n3:idSjednocenehoVysledku
41267
n3:idVysledku
RIV/00216224:14740/14:00074283
n3:jazykVysledku
n12:eng
n3:klicovaSlova
bismuth tellurides; bismuth selenides; Raman spectra; ellipsometric spectra; epitaxial layers
n3:klicoveSlovo
n10:ellipsometric%20spectra n10:epitaxial%20layers n10:bismuth%20selenides n10:bismuth%20tellurides n10:Raman%20spectra
n3:kontrolniKodProRIV
[6B04FCA4A932]
n3:mistoKonaniAkce
Belgrade
n3:mistoVydani
Sweden
n3:nazevZdroje
PHOTONICA ’ 13: 4th International School and Conference on Photonics
n3:obor
n22:BM
n3:pocetDomacichTvurcuVysledku
4
n3:pocetTvurcuVysledku
7
n3:projekt
n17:ED1.1.00%2F02.0068 n17:GAP204%2F12%2F0595
n3:rokUplatneniVysledku
n6:2014
n3:tvurceVysledku
Steiner, Hubert Springholz, Guenther Hemzal, Dušan Bauer, Gunther Humlíček, Josef Caha, Ondřej Dubroka, Adam
n3:typAkce
n18:EUR
n3:zahajeniAkce
2013-01-01+01:00
s:issn
0031-8949
s:numberOfPages
4
n19:doi
10.1088/0031-8949/2014/T162/014007
n15:hasPublisher
Royal Swedish Academy of Sciences
n20:organizacniJednotka
14740