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Statements

Subject Item
n2:RIV%2F00216224%3A14740%2F12%3A00065985%21RIV14-MSM-14740___
rdf:type
n7:Vysledek skos:Concept
rdfs:seeAlso
http://ac.els-cdn.com/S0921452611008167/1-s2.0-S0921452611008167-main.pdf?_tid=a8f910ba-bef8-11e3-ae40-00000aacb35e&acdnat=1396946274_3147665ce89a86731eb6f8a7881fb548
dcterms:description
We have investigated oxygen precipitation in Czochralski silicon wafers focusing on influence of nucleation temperature and high temperature pre-anneal during common three step treatment. Thick Si wafers were studied mainly by x-ray diffraction in Laue transmission geometry using Mo x-ray tube, but were also compared to reciprocal space maps obtained in Bragg reflection geometry. The analysis of measured diffraction scans in Laue geometry was performed by means of Takagi equations and statistical dynamical theory of diffraction. From the simulated Laue diffraction cuvers we find the size of the individual defect area and the fraction of strain area volume in the wafer. The results obtained from x-ray diffraction were compared to loss of interstitial oxygen according to infrared absorption spectroscopy and the size of SiO2 precipitate core was estimated. These techniques are in agreement with transmission electron microscopy images. We have investigated oxygen precipitation in Czochralski silicon wafers focusing on influence of nucleation temperature and high temperature pre-anneal during common three step treatment. Thick Si wafers were studied mainly by x-ray diffraction in Laue transmission geometry using Mo x-ray tube, but were also compared to reciprocal space maps obtained in Bragg reflection geometry. The analysis of measured diffraction scans in Laue geometry was performed by means of Takagi equations and statistical dynamical theory of diffraction. From the simulated Laue diffraction cuvers we find the size of the individual defect area and the fraction of strain area volume in the wafer. The results obtained from x-ray diffraction were compared to loss of interstitial oxygen according to infrared absorption spectroscopy and the size of SiO2 precipitate core was estimated. These techniques are in agreement with transmission electron microscopy images.
dcterms:title
Precipitation in silicon wafers after high temperature preanneal studied by X-ray diffraction methods Precipitation in silicon wafers after high temperature preanneal studied by X-ray diffraction methods
skos:prefLabel
Precipitation in silicon wafers after high temperature preanneal studied by X-ray diffraction methods Precipitation in silicon wafers after high temperature preanneal studied by X-ray diffraction methods
skos:notation
RIV/00216224:14740/12:00065985!RIV14-MSM-14740___
n7:predkladatel
n16:orjk%3A14740
n3:aktivita
n13:P n13:Z
n3:aktivity
P(ED1.1.00/02.0068), P(GA202/09/1013), P(GP202/09/P410), Z(AV0Z20410507), Z(MSM0021622410)
n3:cisloPeriodika
15
n3:dodaniDat
n11:2014
n3:domaciTvurceVysledku
n4:9030506 n4:7105711 n4:1852558
n3:druhVysledku
n15:J
n3:duvernostUdaju
n19:S
n3:entitaPredkladatele
n18:predkladatel
n3:idSjednocenehoVysledku
160937
n3:idVysledku
RIV/00216224:14740/12:00065985
n3:jazykVysledku
n9:eng
n3:klicovaSlova
silicon; interstitial oxygen; precipitation
n3:klicoveSlovo
n8:silicon n8:precipitation n8:interstitial%20oxygen
n3:kodStatuVydavatele
NL - Nizozemsko
n3:kontrolniKodProRIV
[1B4C83C81B38]
n3:nazevZdroje
Physica B condensed matter
n3:obor
n12:BM
n3:pocetDomacichTvurcuVysledku
3
n3:pocetTvurcuVysledku
5
n3:projekt
n14:GP202%2F09%2FP410 n14:ED1.1.00%2F02.0068 n14:GA202%2F09%2F1013
n3:rokUplatneniVysledku
n11:2012
n3:svazekPeriodika
407
n3:tvurceVysledku
Růžička, Jiří Meduňa, Mojmír Caha, Ondřej Svoboda, Milan Buršík, Jiří
n3:wos
000305790800047
n3:zamer
n17:AV0Z20410507 n17:MSM0021622410
s:issn
0921-4526
s:numberOfPages
4
n20:doi
10.1016/j.physb.2011.08.063
n21:organizacniJednotka
14740