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Statements

Subject Item
n2:RIV%2F00216224%3A14740%2F11%3A00057585%21RIV13-GA0-14740___
rdf:type
n9:Vysledek skos:Concept
dcterms:description
The electronic structure of InAs quantum dots (QD) self assembled on GaAs and covered with the GaAs(1-y) Sb(y) strain reducing layer displays several interesting features, depending on the geometry and the composition of the ternary material. The basic motivation is the possible lowering of the emission energy towards the prominent communication bands of 1.3 and 1.55 microns. Using the envelope function theory, we investigate the localization of electrons and holes. The most remarkable finding is the localization of holes outside InAs, close to the base of the dot, for larger value of the Sb content. Thus, typeII molecular-like states are formed as the results of the strain and piezoelectric fields. The parameters of the ternary layer play a crucial role in forming the properties of the QD structures; some of them cannot be easily obtained by X-ray techniques. The electronic structure of InAs quantum dots (QD) self assembled on GaAs and covered with the GaAs(1-y) Sb(y) strain reducing layer displays several interesting features, depending on the geometry and the composition of the ternary material. The basic motivation is the possible lowering of the emission energy towards the prominent communication bands of 1.3 and 1.55 microns. Using the envelope function theory, we investigate the localization of electrons and holes. The most remarkable finding is the localization of holes outside InAs, close to the base of the dot, for larger value of the Sb content. Thus, typeII molecular-like states are formed as the results of the strain and piezoelectric fields. The parameters of the ternary layer play a crucial role in forming the properties of the QD structures; some of them cannot be easily obtained by X-ray techniques.
dcterms:title
ELECTRONIC STRUCTURE OF INAS/GAAS/GAASSB QUANTUM DOTS ELECTRONIC STRUCTURE OF INAS/GAAS/GAASSB QUANTUM DOTS
skos:prefLabel
ELECTRONIC STRUCTURE OF INAS/GAAS/GAASSB QUANTUM DOTS ELECTRONIC STRUCTURE OF INAS/GAAS/GAASSB QUANTUM DOTS
skos:notation
RIV/00216224:14740/11:00057585!RIV13-GA0-14740___
n9:predkladatel
n10:orjk%3A14740
n3:aktivita
n14:I n14:S n14:P n14:Z
n3:aktivity
I, P(GA202/09/0676), S, Z(MSM0021622410)
n3:dodaniDat
n16:2013
n3:domaciTvurceVysledku
n5:6680283 n5:1834282 n5:1037749
n3:druhVysledku
n11:D
n3:duvernostUdaju
n21:S
n3:entitaPredkladatele
n15:predkladatel
n3:idSjednocenehoVysledku
197121
n3:idVysledku
RIV/00216224:14740/11:00057585
n3:jazykVysledku
n12:eng
n3:klicovaSlova
quantum dots; GaAs; InAs; GaAsSb
n3:klicoveSlovo
n13:GaAs n13:InAs n13:quantum%20dots n13:GaAsSb
n3:kontrolniKodProRIV
[9434A22E80FE]
n3:mistoKonaniAkce
Brno
n3:mistoVydani
SLEZSKA
n3:nazevZdroje
3rd International Conference on NANOCON
n3:obor
n17:BM
n3:pocetDomacichTvurcuVysledku
3
n3:pocetTvurcuVysledku
3
n3:projekt
n20:GA202%2F09%2F0676
n3:rokUplatneniVysledku
n16:2011
n3:tvurceVysledku
Klenovský, Petr Munzar, Dominik Humlíček, Josef
n3:typAkce
n23:EUR
n3:wos
000306686700005
n3:zahajeniAkce
2011-01-01+01:00
n3:zamer
n4:MSM0021622410
s:numberOfPages
6
n22:hasPublisher
TANGER LTD
n18:isbn
9788087294277
n8:organizacniJednotka
14740