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Statements

Subject Item
n2:RIV%2F00216224%3A14330%2F03%3A00008608%21RIV08-MSM-14330___
rdf:type
n21:Vysledek skos:Concept
dcterms:description
Hard diamond like carbon (DLC) films with an addition of SiOx were deposited by capacitively coupled rf discharges from mixture of methane and hexamethyldisiloxane (HMDSO). The flow rate was changed in order to vary the SiOx content in the films. Thickness of the films was determined by ellipsometry. FTIR spectra showed presence of C-H bonds as well as silicon bonded to hydrogen and hydrocarbon groups. In the region 630-900 cm-1 normalized absorbance was computed. It is shown that the concentration of silicon containing bonds grows with the flow rate of HMDSO growing. Hard diamond like carbon (DLC) films with an addition of SiOx were deposited by capacitively coupled rf discharges from mixture of methane and hexamethyldisiloxane (HMDSO). The flow rate was changed in order to vary the SiOx content in the films. Thickness of the films was determined by ellipsometry. FTIR spectra showed presence of C-H bonds as well as silicon bonded to hydrogen and hydrocarbon groups. In the region 630-900 cm-1 normalized absorbance was computed. It is shown that the concentration of silicon containing bonds grows with the flow rate of HMDSO growing. Hard diamond like carbon (DLC) films with an addition of SiOx were deposited by capacitively coupled rf discharges from mixture of methane and hexamethyldisiloxane (HMDSO). The flow rate was changed in order to vary the SiOx content in the films. Thickness of the films was determined by ellipsometry. FTIR spectra showed presence of C-H bonds as well as silicon bonded to hydrogen and hydrocarbon groups. In the region 630-900 cm-1 normalized absorbance was computed. It is shown that the concentration of silicon containing bonds grows with the flow rate of HMDSO growing.
dcterms:title
Dependence of the Normalized Absorbance of the DLC:SiOx Thin Films on the Flow Rate of HMDSO Dependence of the Normalized Absorbance of the DLC:SiOx Thin Films on the Flow Rate of HMDSO Dependence of the Normalized Absorbance of the DLC:SiOx Thin Films on the Flow Rate of HMDSO
skos:prefLabel
Dependence of the Normalized Absorbance of the DLC:SiOx Thin Films on the Flow Rate of HMDSO Dependence of the Normalized Absorbance of the DLC:SiOx Thin Films on the Flow Rate of HMDSO Dependence of the Normalized Absorbance of the DLC:SiOx Thin Films on the Flow Rate of HMDSO
skos:notation
RIV/00216224:14330/03:00008608!RIV08-MSM-14330___
n3:strany
58
n3:aktivita
n13:Z n13:P
n3:aktivity
P(GA202/00/P037), Z(MSM 143100003)
n3:dodaniDat
n5:2008
n3:domaciTvurceVysledku
n7:5823803 n7:1739948 n7:4205448
n3:druhVysledku
n18:D
n3:duvernostUdaju
n8:S
n3:entitaPredkladatele
n15:predkladatel
n3:idSjednocenehoVysledku
603088
n3:idVysledku
RIV/00216224:14330/03:00008608
n3:jazykVysledku
n14:eng
n3:klicovaSlova
plasma; DLC; films; methane; HMDSO; pecvd; radio frequency; discharge; FTIR; normalized absorbance
n3:klicoveSlovo
n4:radio%20frequency n4:plasma n4:films n4:DLC n4:HMDSO n4:pecvd n4:discharge n4:normalized%20absorbance n4:methane n4:FTIR
n3:kontrolniKodProRIV
[3810209915B1]
n3:mistoKonaniAkce
23.-24. 9. 2003, Brno
n3:mistoVydani
Brno
n3:nazevZdroje
JUNIORMAT 03
n3:obor
n6:BL
n3:pocetDomacichTvurcuVysledku
3
n3:pocetTvurcuVysledku
3
n3:projekt
n19:GA202%2F00%2FP037
n3:rokUplatneniVysledku
n5:2003
n3:tvurceVysledku
Zajíčková, Lenka Valtr, Miroslav Buršíková, Vilma
n3:typAkce
n11:CST
n3:zahajeniAkce
2003-01-01+01:00
n3:zamer
n9:MSM%20143100003
s:numberOfPages
2
n16:hasPublisher
Vysoké učení technické v Brně. Fakulta strojního inženýrství. Ústav materiálových věd a inženýrství; Česká společnost pro nové materiály a technologie
n20:isbn
80-214-2462-1
n22:organizacniJednotka
14330