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Statements

Subject Item
n2:RIV%2F00216224%3A14310%2F99%3A00002088%21RIV08-MSM-14310___
rdf:type
n7:Vysledek skos:Concept
dcterms:description
In this paper the method based on interpreting the data measured within variable angle of incidence spectroscopic ellipsometry and spectroscopic reflectometry is used for the complete optical analysis of hydrogenated amorphous silicon layers deposited on silicon single crystal wafers. This method enables us to perform the analysis of these layers in a relatively wide spectral region because of both roughness and native oxide layer existing on the upper boundary of every silicon layer studied is respected at its analysis. The results obtained for a chosen sample of the hydrogenated amorphous silicon layer are presented. In this paper the method based on interpreting the data measured within variable angle of incidence spectroscopic ellipsometry and spectroscopic reflectometry is used for the complete optical analysis of hydrogenated amorphous silicon layers deposited on silicon single crystal wafers. This method enables us to perform the analysis of these layers in a relatively wide spectral region because of both roughness and native oxide layer existing on the upper boundary of every silicon layer studied is respected at its analysis. The results obtained for a chosen sample of the hydrogenated amorphous silicon layer are presented. In this paper the method based on interpreting the data measured within variable angle of incidence spectroscopic ellipsometry and spectroscopic reflectometry is used for the complete optical analysis of hydrogenated amorphous silicon layers deposited on silicon single crystal wafers. This method enables us to perform the analysis of these layers in a relatively wide spectral region because of both roughness and native oxide layer existing on the upper boundary of every silicon layer studied is respected at its analysis. The results obtained for a chosen sample of the hydrogenated amorphous silicon layer are presented.
dcterms:title
Complete optical characterization of imperfect hydrogenated amorphous silicon layers by spectroscopic ellipsometry and spectroscopic reflectometry Complete optical characterization of imperfect hydrogenated amorphous silicon layers by spectroscopic ellipsometry and spectroscopic reflectometry Complete optical characterization of imperfect hydrogenated amorphous silicon layers by spectroscopic ellipsometry and spectroscopic reflectometry
skos:prefLabel
Complete optical characterization of imperfect hydrogenated amorphous silicon layers by spectroscopic ellipsometry and spectroscopic reflectometry Complete optical characterization of imperfect hydrogenated amorphous silicon layers by spectroscopic ellipsometry and spectroscopic reflectometry Complete optical characterization of imperfect hydrogenated amorphous silicon layers by spectroscopic ellipsometry and spectroscopic reflectometry
skos:notation
RIV/00216224:14310/99:00002088!RIV08-MSM-14310___
n3:strany
295
n3:aktivita
n17:P
n3:aktivity
P(GA202/98/0988), P(VS96084)
n3:cisloPeriodika
1
n3:dodaniDat
n6:2008
n3:domaciTvurceVysledku
n8:2026384 n8:2275546 n8:9412921 n8:1037749 n8:3218902
n3:druhVysledku
n18:J
n3:duvernostUdaju
n11:S
n3:entitaPredkladatele
n15:predkladatel
n3:idSjednocenehoVysledku
737253
n3:idVysledku
RIV/00216224:14310/99:00002088
n3:jazykVysledku
n4:eng
n3:klicovaSlova
Amorphous silicon films; Optical constants; Roughness
n3:klicoveSlovo
n9:Roughness n9:Amorphous%20silicon%20films n9:Optical%20constants
n3:kodStatuVydavatele
GB - Spojené království Velké Británie a Severního Irska
n3:kontrolniKodProRIV
[F0C530C9FE81]
n3:nazevZdroje
Thin Solid Films
n3:obor
n13:BM
n3:pocetDomacichTvurcuVysledku
5
n3:pocetTvurcuVysledku
8
n3:projekt
n16:GA202%2F98%2F0988 n16:VS96084
n3:rokUplatneniVysledku
n6:1999
n3:svazekPeriodika
343-344
n3:tvurceVysledku
Vittone, Ettore Franta, Daniel Navrátil, Karel Hora, Jaroslav Munzar, Dominik Fizzotti, Franco Ohlídal, Ivan Manfredotti, Claudio
s:issn
0040-6090
s:numberOfPages
4
n12:organizacniJednotka
14310