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Statements

Subject Item
n2:RIV%2F00216224%3A14310%2F14%3A00079590%21RIV15-MSM-14310___
rdf:type
skos:Concept n19:Vysledek
rdfs:seeAlso
http://ac.els-cdn.com/S0040609014003514/1-s2.0-S0040609014003514-main.pdf?_tid=0ab31e60-cd51-11e4-974b-00000aacb361&acdnat=1426671048_33720b9a5f3421f518aa642d5757ebfa
dcterms:description
The distribution of the total transition strength, i.e. the right hand side of the integral form of Thomas-Reiche-Kuhn sum rule, into individual absorption processes is described for crystalline silicon containing interstitial oxygen. Utilization of the sum rule allows the construction of a dispersion model covering all elementary excitations from phonon absorption to core electron excitations. The dependence of transition strength of individual electronic and phonon contributions on temperature and oxygen content is described. (C) 2014 Elsevier B.V. All rights reserved. The distribution of the total transition strength, i.e. the right hand side of the integral form of Thomas-Reiche-Kuhn sum rule, into individual absorption processes is described for crystalline silicon containing interstitial oxygen. Utilization of the sum rule allows the construction of a dispersion model covering all elementary excitations from phonon absorption to core electron excitations. The dependence of transition strength of individual electronic and phonon contributions on temperature and oxygen content is described. (C) 2014 Elsevier B.V. All rights reserved.
dcterms:title
Utilization of the sum rule for construction of advanced dispersion model of crystalline silicon containing interstitial oxygen Utilization of the sum rule for construction of advanced dispersion model of crystalline silicon containing interstitial oxygen
skos:prefLabel
Utilization of the sum rule for construction of advanced dispersion model of crystalline silicon containing interstitial oxygen Utilization of the sum rule for construction of advanced dispersion model of crystalline silicon containing interstitial oxygen
skos:notation
RIV/00216224:14310/14:00079590!RIV15-MSM-14310___
n4:aktivita
n10:P
n4:aktivity
P(ED1.1.00/02.0068), P(ED2.1.00/03.0086)
n4:cisloPeriodika
november
n4:dodaniDat
n14:2015
n4:domaciTvurceVysledku
n7:4205448 n7:9412921 n7:2026384 n7:5870879
n4:druhVysledku
n12:J
n4:duvernostUdaju
n5:S
n4:entitaPredkladatele
n11:predkladatel
n4:idSjednocenehoVysledku
52652
n4:idVysledku
RIV/00216224:14310/14:00079590
n4:jazykVysledku
n15:eng
n4:klicovaSlova
Dispersion model; Sum rule; Transition strength; Crystalline silicon
n4:klicoveSlovo
n6:Transition%20strength n6:Dispersion%20model n6:Sum%20rule n6:Crystalline%20silicon
n4:kodStatuVydavatele
CH - Švýcarská konfederace
n4:kontrolniKodProRIV
[710D4D4C101F]
n4:nazevZdroje
Thin Solid Films
n4:obor
n20:BM
n4:pocetDomacichTvurcuVysledku
4
n4:pocetTvurcuVysledku
4
n4:projekt
n18:ED2.1.00%2F03.0086 n18:ED1.1.00%2F02.0068
n4:rokUplatneniVysledku
n14:2014
n4:svazekPeriodika
571
n4:tvurceVysledku
Zajíčková, Lenka Nečas, David Ohlídal, Ivan Franta, Daniel
n4:wos
000346055200027
s:issn
0040-6090
s:numberOfPages
6
n17:doi
10.1016/j.tsf.2014.03.059
n8:organizacniJednotka
14310