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Statements

Subject Item
n2:RIV%2F00216224%3A14310%2F14%3A00073318%21RIV15-MSM-14310___
rdf:type
skos:Concept n19:Vysledek
rdfs:seeAlso
http://www.opticsinfobase.org/view_article.cfm?gotourl=http%3A%2F%2Fwww.opticsinfobase.org%2FDirectPDFAccess%2FB9069063-9DEF-05B1-C29672DD04E649DB_296190%2Fome-4-8-1641.pdf%3Fda%3D1%26id%3D296190%26seq%3D0%26mobile%3Dno&org=
dcterms:description
A dispersion model describing two-phonon absorption is developed using several simplifications of the quasiparticle approach. The dielectric response is constructed from absorption bands corresponding to individual additive and subtractive combinations of phonon branches. The model also includes thermal effects, changes of the transition strength with temperature, originating in Bose-Einstein statistics, and the shift of phonon frequencies accompanying thermal expansion. The model is applied to the analysis of experimental data measured in the IR range on crystalline silicon. The modeled spectral dependencies of optical constants are capable of describing all features in the transmittance spectra 70-1000 cm(-1) observable at 300K for float-zone silicon. The phonon frequencies in the points of symmetry are obtained independently in good agreement with ab initio calculations. The model of thermal effects is verified using ellipsometric measurements 300-1000 cm(-1) in the temperature range of 300-500 K. A dispersion model describing two-phonon absorption is developed using several simplifications of the quasiparticle approach. The dielectric response is constructed from absorption bands corresponding to individual additive and subtractive combinations of phonon branches. The model also includes thermal effects, changes of the transition strength with temperature, originating in Bose-Einstein statistics, and the shift of phonon frequencies accompanying thermal expansion. The model is applied to the analysis of experimental data measured in the IR range on crystalline silicon. The modeled spectral dependencies of optical constants are capable of describing all features in the transmittance spectra 70-1000 cm(-1) observable at 300K for float-zone silicon. The phonon frequencies in the points of symmetry are obtained independently in good agreement with ab initio calculations. The model of thermal effects is verified using ellipsometric measurements 300-1000 cm(-1) in the temperature range of 300-500 K.
dcterms:title
Dispersion model of two-phonon absorption: application to c-Si Dispersion model of two-phonon absorption: application to c-Si
skos:prefLabel
Dispersion model of two-phonon absorption: application to c-Si Dispersion model of two-phonon absorption: application to c-Si
skos:notation
RIV/00216224:14310/14:00073318!RIV15-MSM-14310___
n4:aktivita
n18:P
n4:aktivity
P(ED1.1.00/02.0068), P(ED2.1.00/03.0086), P(TA02010784)
n4:cisloPeriodika
8
n4:dodaniDat
n7:2015
n4:domaciTvurceVysledku
n12:5870879 n12:2026384 n12:4205448 n12:9412921
n4:druhVysledku
n20:J
n4:duvernostUdaju
n5:S
n4:entitaPredkladatele
n6:predkladatel
n4:idSjednocenehoVysledku
11754
n4:idVysledku
RIV/00216224:14310/14:00073318
n4:jazykVysledku
n15:eng
n4:klicovaSlova
HFO2 THIN-FILMS; LATTICE ABSORPTION; OPTICAL-PROPERTIES; SILICON; DEPOSITION
n4:klicoveSlovo
n8:DEPOSITION n8:SILICON n8:LATTICE%20ABSORPTION n8:HFO2%20THIN-FILMS n8:OPTICAL-PROPERTIES
n4:kodStatuVydavatele
US - Spojené státy americké
n4:kontrolniKodProRIV
[19A13DB7ABDE]
n4:nazevZdroje
OPTICAL MATERIALS EXPRESS
n4:obor
n11:BH
n4:pocetDomacichTvurcuVysledku
4
n4:pocetTvurcuVysledku
4
n4:projekt
n13:ED2.1.00%2F03.0086 n13:TA02010784 n13:ED1.1.00%2F02.0068
n4:rokUplatneniVysledku
n7:2014
n4:svazekPeriodika
4
n4:tvurceVysledku
Franta, Daniel Zajíčková, Lenka Ohlídal, Ivan Nečas, David
n4:wos
000341647900016
s:issn
2159-3930
s:numberOfPages
16
n16:doi
10.1364/OME.4.001641
n10:organizacniJednotka
14310