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Namespace Prefixes

PrefixIRI
dctermshttp://purl.org/dc/terms/
n18http://localhost/temp/predkladatel/
n13http://linked.opendata.cz/resource/domain/vavai/projekt/
n4http://linked.opendata.cz/resource/domain/vavai/riv/tvurce/
n17http://linked.opendata.cz/resource/domain/vavai/subjekt/
n11http://linked.opendata.cz/ontology/domain/vavai/
n8http://linked.opendata.cz/resource/domain/vavai/vysledek/RIV%2F00216224%3A14310%2F13%3A00068098%21RIV14-MSM-14310___/
shttp://schema.org/
skoshttp://www.w3.org/2004/02/skos/core#
n3http://linked.opendata.cz/ontology/domain/vavai/riv/
n19http://bibframe.org/vocab/
n2http://linked.opendata.cz/resource/domain/vavai/vysledek/
rdfhttp://www.w3.org/1999/02/22-rdf-syntax-ns#
n7http://linked.opendata.cz/ontology/domain/vavai/riv/klicoveSlovo/
n9http://linked.opendata.cz/ontology/domain/vavai/riv/duvernostUdaju/
xsdhhttp://www.w3.org/2001/XMLSchema#
n20http://linked.opendata.cz/ontology/domain/vavai/riv/jazykVysledku/
n16http://linked.opendata.cz/ontology/domain/vavai/riv/aktivita/
n14http://linked.opendata.cz/ontology/domain/vavai/riv/obor/
n10http://linked.opendata.cz/ontology/domain/vavai/riv/druhVysledku/
n12http://reference.data.gov.uk/id/gregorian-year/

Statements

Subject Item
n2:RIV%2F00216224%3A14310%2F13%3A00068098%21RIV14-MSM-14310___
rdf:type
n11:Vysledek skos:Concept
dcterms:description
In this paper a new process for the preparation of thin silicon dioxide (SiO2) film is presented: the oxidation of c-Si (1 1 1) surface in atmospheric pressure plasma at room temperature. Diffuse coplanar surface barrier discharge (DCSBD) at atmospheric pressure in air and oxygen atmosphere has been used. The oxidation rate and the thickness of oxidized layers were estimated by ellipsometry. The structure and the chemical composition of oxidized layers were investigated by infrared reflection absorption spectroscopy (IRRAS), X-ray photoelectron spectroscopy (XPS) and energy dispersive X-ray (EDX) analysis. Scanning electron microscopy (SEM) was used to observe the morphology of the layer surface. It was found that stoichiometric SiO2 layers were obtained with oxidation rates comparable to thermal oxidation. In this paper a new process for the preparation of thin silicon dioxide (SiO2) film is presented: the oxidation of c-Si (1 1 1) surface in atmospheric pressure plasma at room temperature. Diffuse coplanar surface barrier discharge (DCSBD) at atmospheric pressure in air and oxygen atmosphere has been used. The oxidation rate and the thickness of oxidized layers were estimated by ellipsometry. The structure and the chemical composition of oxidized layers were investigated by infrared reflection absorption spectroscopy (IRRAS), X-ray photoelectron spectroscopy (XPS) and energy dispersive X-ray (EDX) analysis. Scanning electron microscopy (SEM) was used to observe the morphology of the layer surface. It was found that stoichiometric SiO2 layers were obtained with oxidation rates comparable to thermal oxidation.
dcterms:title
Room temperature plasma oxidation in DCSBD: A new method for preparation of silicon dioxide films at atmospheric pressure Room temperature plasma oxidation in DCSBD: A new method for preparation of silicon dioxide films at atmospheric pressure
skos:prefLabel
Room temperature plasma oxidation in DCSBD: A new method for preparation of silicon dioxide films at atmospheric pressure Room temperature plasma oxidation in DCSBD: A new method for preparation of silicon dioxide films at atmospheric pressure
skos:notation
RIV/00216224:14310/13:00068098!RIV14-MSM-14310___
n11:predkladatel
n17:orjk%3A14310
n3:aktivita
n16:P
n3:aktivity
P(ED2.1.00/03.0086)
n3:cisloPeriodika
9
n3:dodaniDat
n12:2014
n3:domaciTvurceVysledku
n4:1462202 n4:6760880 n4:1879405
n3:druhVysledku
n10:J
n3:duvernostUdaju
n9:S
n3:entitaPredkladatele
n8:predkladatel
n3:idSjednocenehoVysledku
103465
n3:idVysledku
RIV/00216224:14310/13:00068098
n3:jazykVysledku
n20:eng
n3:klicovaSlova
Atmospheric pressure plasma; Plasma oxidation; Silicon dioxide; Coplanar DBD
n3:klicoveSlovo
n7:Coplanar%20DBD n7:Atmospheric%20pressure%20plasma n7:Plasma%20oxidation n7:Silicon%20dioxide
n3:kodStatuVydavatele
NL - Nizozemsko
n3:kontrolniKodProRIV
[BD4F9683D709]
n3:nazevZdroje
Materials Science & Engineering B
n3:obor
n14:BL
n3:pocetDomacichTvurcuVysledku
3
n3:pocetTvurcuVysledku
7
n3:projekt
n13:ED2.1.00%2F03.0086
n3:rokUplatneniVysledku
n12:2013
n3:svazekPeriodika
178
n3:tvurceVysledku
Schäfer, Jan Černák, Mirko Quade, Antje Sťahel, Pavel Skácelová, Dana Meichsner, Jürgen Danilov, Vladimir
n3:wos
000318581800018
s:issn
0921-5107
s:numberOfPages
5
n19:doi
10.1016/j.mseb.2012.10.017
n18:organizacniJednotka
14310