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Statements

Subject Item
n2:RIV%2F00216224%3A14310%2F12%3A00064633%21RIV13-MSM-14310___
rdf:type
skos:Concept n15:Vysledek
dcterms:description
In this contribution, the surface modification of crystalline silicon surface in oxygen atmosphere was investigated. Moreover the effect of crystallographic orientation and surface pre-cleaning of silicon surface were studied. c-Si wafers (100) and (111) oriented were cleaned in isopropyl alcohol or etched in HF solution and afterwards treated in Diffuse Coplanar Surface Barrier Discharge. Wettability, changes of surface properties and ageing effect of plasma treated surface were studied by means of contact angle measurement. It was proved, that modification of c-Si surface in oxygen plasma improve the wettability independent on crystallographic orientation and initial cleaning process. In this contribution, the surface modification of crystalline silicon surface in oxygen atmosphere was investigated. Moreover the effect of crystallographic orientation and surface pre-cleaning of silicon surface were studied. c-Si wafers (100) and (111) oriented were cleaned in isopropyl alcohol or etched in HF solution and afterwards treated in Diffuse Coplanar Surface Barrier Discharge. Wettability, changes of surface properties and ageing effect of plasma treated surface were studied by means of contact angle measurement. It was proved, that modification of c-Si surface in oxygen plasma improve the wettability independent on crystallographic orientation and initial cleaning process.
dcterms:title
Activation of silicon surface in atmospheric oxygen plasma Activation of silicon surface in atmospheric oxygen plasma
skos:prefLabel
Activation of silicon surface in atmospheric oxygen plasma Activation of silicon surface in atmospheric oxygen plasma
skos:notation
RIV/00216224:14310/12:00064633!RIV13-MSM-14310___
n15:predkladatel
n16:orjk%3A14310
n3:aktivita
n19:P
n3:aktivity
P(ED2.1.00/03.0086)
n3:cisloPeriodika
S
n3:dodaniDat
n8:2013
n3:domaciTvurceVysledku
n5:1879405 n5:1462202 n5:6760880
n3:druhVysledku
n6:J
n3:duvernostUdaju
n14:S
n3:entitaPredkladatele
n18:predkladatel
n3:idSjednocenehoVysledku
120950
n3:idVysledku
RIV/00216224:14310/12:00064633
n3:jazykVysledku
n7:eng
n3:klicovaSlova
DCSBD; Si wafer; activation; oxygen plasma
n3:klicoveSlovo
n9:oxygen%20plasma n9:Si%20wafer n9:DCSBD n9:activation
n3:kodStatuVydavatele
CZ - Česká republika
n3:kontrolniKodProRIV
[FD3F6229AAEE]
n3:nazevZdroje
CHEMICKÉ LISTY
n3:obor
n4:BL
n3:pocetDomacichTvurcuVysledku
3
n3:pocetTvurcuVysledku
3
n3:projekt
n17:ED2.1.00%2F03.0086
n3:rokUplatneniVysledku
n8:2012
n3:svazekPeriodika
106
n3:tvurceVysledku
Černák, Mirko Skácelová, Dana Sťahel, Pavel
s:issn
0009-2770
s:numberOfPages
3
n12:organizacniJednotka
14310