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Statements

Subject Item
n2:RIV%2F00216224%3A14310%2F11%3A00049535%21RIV12-AV0-14310___
rdf:type
skos:Concept n8:Vysledek
dcterms:description
Electrical conductivity, dielectric permittivity and mechanical hardness of the polycrystalline CeO2 + xSm2O3 (x = 0, 10.9-15.9 mol %) films prepared by Electron Beam Physical Vapour Deposition (EB-PVD) and Ionic Beam Assisted Deposition, (IBAD), techniques were investigated in dependence on their structure and microstructure influenced by the deposition conditions, namely composition, deposition temperature and Ar+ ion bombardment. The electrical conductivity of doped ceria prepared without Ar+ ion bombardment and investigated by the impedance spectroscopy, IS, was found to be predominantly ionic one under the oxidizing atmosphere/low-temperature conditions and the higher amounts of Sm2O3 (>10 mol %) used. The bulk conductivity as a part of total measured conductivity was a subject of interest because the grain boundary conductivity was found to be 3 orders of magnitude lower than the corresponding bulk conductivity. Electrical conductivity, dielectric permittivity and mechanical hardness of the polycrystalline CeO2 + xSm2O3 (x = 0, 10.9-15.9 mol %) films prepared by Electron Beam Physical Vapour Deposition (EB-PVD) and Ionic Beam Assisted Deposition, (IBAD), techniques were investigated in dependence on their structure and microstructure influenced by the deposition conditions, namely composition, deposition temperature and Ar+ ion bombardment. The electrical conductivity of doped ceria prepared without Ar+ ion bombardment and investigated by the impedance spectroscopy, IS, was found to be predominantly ionic one under the oxidizing atmosphere/low-temperature conditions and the higher amounts of Sm2O3 (>10 mol %) used. The bulk conductivity as a part of total measured conductivity was a subject of interest because the grain boundary conductivity was found to be 3 orders of magnitude lower than the corresponding bulk conductivity.
dcterms:title
Effect of crystallographic structure on electrical and mechanical characteristics of Sm2O3-Doped CeO2 films Effect of crystallographic structure on electrical and mechanical characteristics of Sm2O3-Doped CeO2 films
skos:prefLabel
Effect of crystallographic structure on electrical and mechanical characteristics of Sm2O3-Doped CeO2 films Effect of crystallographic structure on electrical and mechanical characteristics of Sm2O3-Doped CeO2 films
skos:notation
RIV/00216224:14310/11:00049535!RIV12-AV0-14310___
n8:predkladatel
n9:orjk%3A14310
n3:aktivita
n14:Z n14:S n14:P
n3:aktivity
P(KAN311610701), S, Z(MSM0021622411)
n3:cisloPeriodika
5
n3:dodaniDat
n10:2012
n3:domaciTvurceVysledku
n6:4928288 n6:5823803
n3:druhVysledku
n15:J
n3:duvernostUdaju
n12:S
n3:entitaPredkladatele
n19:predkladatel
n3:idSjednocenehoVysledku
196219
n3:idVysledku
RIV/00216224:14310/11:00049535
n3:jazykVysledku
n20:eng
n3:klicovaSlova
CeO2; Sm2O3; e-beam evaporation; ionic beam assisted deposition; impedance spectroscopy; indentation technique; electrical conductivity; dielectric permittivity; microhardness
n3:klicoveSlovo
n4:e-beam%20evaporation n4:indentation%20technique n4:dielectric%20permittivity n4:electrical%20conductivity n4:microhardness n4:ionic%20beam%20assisted%20deposition n4:CeO2 n4:impedance%20spectroscopy n4:Sm2O3
n3:kodStatuVydavatele
CZ - Česká republika
n3:kontrolniKodProRIV
[9AD593368C32]
n3:nazevZdroje
Russian Journal of Electrochemistry
n3:obor
n18:BL
n3:pocetDomacichTvurcuVysledku
2
n3:pocetTvurcuVysledku
5
n3:projekt
n17:KAN311610701
n3:rokUplatneniVysledku
n10:2011
n3:svazekPeriodika
47
n3:tvurceVysledku
Kundracik, František Buršíková, Vilma Navrátil, Vladislav Mansilla, C. Hartmanová, Maria
n3:zamer
n16:MSM0021622411
s:issn
1023-1935
s:numberOfPages
12
n7:organizacniJednotka
14310