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Statements

Subject Item
n2:RIV%2F00216224%3A14310%2F10%3A00049717%21RIV12-GA0-14310___
rdf:type
skos:Concept n20:Vysledek
dcterms:description
Densities of Mn ions in epitaxial layers of (Ga,Mn)As were determined by anomalous x-ray diffraction, i.e., by a measurement of the dependence of the intensity of weak diffraction 002 on the photon energy around the MnK absorption edge. From the measured data it was possible to determine the density of Mn ions in substitutional positions and the difference in the Mn densities in two possible interstitial positions in the GaAs lattice. The data confirm the previous finding that the density of Mn interstitials in centers of Ga tetrahedrons decrease during post-growth annealing. Densities of Mn ions in epitaxial layers of (Ga,Mn)As were determined by anomalous x-ray diffraction, i.e., by a measurement of the dependence of the intensity of weak diffraction 002 on the photon energy around the MnK absorption edge. From the measured data it was possible to determine the density of Mn ions in substitutional positions and the difference in the Mn densities in two possible interstitial positions in the GaAs lattice. The data confirm the previous finding that the density of Mn interstitials in centers of Ga tetrahedrons decrease during post-growth annealing.
dcterms:title
Density of Mn interstitials in (Ga,Mn)As epitaxial layers determined by anomalous x-ray diffraction Density of Mn interstitials in (Ga,Mn)As epitaxial layers determined by anomalous x-ray diffraction
skos:prefLabel
Density of Mn interstitials in (Ga,Mn)As epitaxial layers determined by anomalous x-ray diffraction Density of Mn interstitials in (Ga,Mn)As epitaxial layers determined by anomalous x-ray diffraction
skos:notation
RIV/00216224:14310/10:00049717!RIV12-GA0-14310___
n4:aktivita
n6:Z n6:S n6:P
n4:aktivity
P(7E08093), P(GP202/09/P410), P(IAA101120805), S, Z(AV0Z10100521), Z(MSM0021620834), Z(MSM0021622410)
n4:cisloPeriodika
18
n4:dodaniDat
n15:2012
n4:domaciTvurceVysledku
n5:7105711
n4:druhVysledku
n8:J
n4:duvernostUdaju
n19:S
n4:entitaPredkladatele
n18:predkladatel
n4:idSjednocenehoVysledku
253310
n4:idVysledku
RIV/00216224:14310/10:00049717
n4:jazykVysledku
n10:eng
n4:klicovaSlova
ferromagnetic semiconductos; anomal x-ray diffraction
n4:klicoveSlovo
n17:anomal%20x-ray%20diffraction n17:ferromagnetic%20semiconductos
n4:kodStatuVydavatele
US - Spojené státy americké
n4:kontrolniKodProRIV
[F3C3927AB6A9]
n4:nazevZdroje
Applied Physics Letters
n4:obor
n14:BM
n4:pocetDomacichTvurcuVysledku
1
n4:pocetTvurcuVysledku
7
n4:projekt
n16:IAA101120805 n16:7E08093 n16:GP202%2F09%2FP410
n4:rokUplatneniVysledku
n15:2010
n4:svazekPeriodika
97
n4:tvurceVysledku
Novák, Vít Horák, Lukáš Cukr, Miroslav Martí, Xavier Caha, Ondřej Schülli, Tobias Urs Holý, Václav
n4:zamer
n7:AV0Z10100521 n7:MSM0021622410 n7:MSM0021620834
s:issn
0003-6951
s:numberOfPages
3
n12:doi
10.1063/1.3514240
n13:organizacniJednotka
14310