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Statements

Subject Item
n2:RIV%2F00216224%3A14310%2F10%3A00046208%21RIV11-GA0-14310___
rdf:type
n16:Vysledek skos:Concept
dcterms:description
Fourier components of discharge voltages were measured in two different reactive plasmas and their response to the creation or destruction of a thin film was studied. In reactive magnetron sputtering the effect of transition from the metallic to the compound mode accompanied by creation of a compound film on the sputtered target was observed. Further, deposition and etching of a DLC film and their effects on amplitudes of Fourier components of the discharge voltage were studied. It was shown that the Fourier components, including higher harmonic frequencies, sensitively react to the presence of a film. Therefore, they can be used as a powerful tool for the monitoring of deposition and etching processes. It was demonstrated that the behaviour of the Fourier components was caused in both experiments by the presence of the film. The behaviour of the Fourier components can be explained by the difference between coefficients of secondary electron emission of the film and its underlying material. Fourier components of discharge voltages were measured in two different reactive plasmas and their response to the creation or destruction of a thin film was studied. In reactive magnetron sputtering the effect of transition from the metallic to the compound mode accompanied by creation of a compound film on the sputtered target was observed. Further, deposition and etching of a DLC film and their effects on amplitudes of Fourier components of the discharge voltage were studied. It was shown that the Fourier components, including higher harmonic frequencies, sensitively react to the presence of a film. Therefore, they can be used as a powerful tool for the monitoring of deposition and etching processes. It was demonstrated that the behaviour of the Fourier components was caused in both experiments by the presence of the film. The behaviour of the Fourier components can be explained by the difference between coefficients of secondary electron emission of the film and its underlying material.
dcterms:title
Monitoring of PVD, PECVD and etching plasmas using Fourier components of RF voltage Monitoring of PVD, PECVD and etching plasmas using Fourier components of RF voltage
skos:prefLabel
Monitoring of PVD, PECVD and etching plasmas using Fourier components of RF voltage Monitoring of PVD, PECVD and etching plasmas using Fourier components of RF voltage
skos:notation
RIV/00216224:14310/10:00046208!RIV11-GA0-14310___
n4:aktivita
n8:Z n8:P
n4:aktivity
P(GA202/07/1669), P(GP202/08/P038), Z(MSM0021622411)
n4:cisloPeriodika
12
n4:dodaniDat
n9:2011
n4:domaciTvurceVysledku
n15:8853908 n15:5823803 n15:6296556 n15:3589730
n4:druhVysledku
n12:J
n4:duvernostUdaju
n7:S
n4:entitaPredkladatele
n10:predkladatel
n4:idSjednocenehoVysledku
272489
n4:idVysledku
RIV/00216224:14310/10:00046208
n4:jazykVysledku
n17:eng
n4:klicovaSlova
plasma; higher harmonic frequencies; capacitively coupled discharge; reactive magnetron sputtering; DLC
n4:klicoveSlovo
n5:capacitively%20coupled%20discharge n5:plasma n5:DLC n5:reactive%20magnetron%20sputtering n5:higher%20harmonic%20frequencies
n4:kodStatuVydavatele
GB - Spojené království Velké Británie a Severního Irska
n4:kontrolniKodProRIV
[C6ACBD7FC578]
n4:nazevZdroje
Plasma Physics and Controlled Fusion
n4:obor
n13:BL
n4:pocetDomacichTvurcuVysledku
4
n4:pocetTvurcuVysledku
4
n4:projekt
n14:GA202%2F07%2F1669 n14:GP202%2F08%2FP038
n4:rokUplatneniVysledku
n9:2010
n4:svazekPeriodika
52
n4:tvurceVysledku
Vašina, Petr Buršíková, Vilma Žemlička, Radek Dvořák, Pavel
n4:wos
000284406600013
n4:zamer
n19:MSM0021622411
s:issn
0741-3335
s:numberOfPages
12
n18:organizacniJednotka
14310