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Statements

Subject Item
n2:RIV%2F00216224%3A14310%2F10%3A00045417%21RIV11-GA0-14310___
rdf:type
n13:Vysledek skos:Concept
dcterms:description
We present results of our 8-band k.p calculations of the emission energy of InAs/GaAs quantum dots (QDs) covered with GaAs1-xSbx strain reducing overlayer (SRO). In agreement with previous experimental observations we find a strong red shift of the emission with increasing Sb content. We explain this effect by: (1) The lowering of the valence band offset between the QD and the SRO with increasing Sb content resulting in the type-II QDs with holes confined in the SRO for Sb concentration above 14%. (2) The reduction of compressive strain inside the QDs. The contributions of these mechanisms to the total red shift are estimated and compared. For realistic shape and size of the QD and a realistic value of the SRO thickness the previously measured photoluminescence data are reproduced with fairly good accuracy. We present results of our 8-band k.p calculations of the emission energy of InAs/GaAs quantum dots (QDs) covered with GaAs1-xSbx strain reducing overlayer (SRO). In agreement with previous experimental observations we find a strong red shift of the emission with increasing Sb content. We explain this effect by: (1) The lowering of the valence band offset between the QD and the SRO with increasing Sb content resulting in the type-II QDs with holes confined in the SRO for Sb concentration above 14%. (2) The reduction of compressive strain inside the QDs. The contributions of these mechanisms to the total red shift are estimated and compared. For realistic shape and size of the QD and a realistic value of the SRO thickness the previously measured photoluminescence data are reproduced with fairly good accuracy.
dcterms:title
Modelling of electronic states in InAs/GaAs quantum dots with GaAsSb strain reducing overlayer Modelling of electronic states in InAs/GaAs quantum dots with GaAsSb strain reducing overlayer
skos:prefLabel
Modelling of electronic states in InAs/GaAs quantum dots with GaAsSb strain reducing overlayer Modelling of electronic states in InAs/GaAs quantum dots with GaAsSb strain reducing overlayer
skos:notation
RIV/00216224:14310/10:00045417!RIV11-GA0-14310___
n3:aktivita
n11:Z n11:S n11:P
n3:aktivity
P(GA202/09/0676), S, Z(MSM0021622410)
n3:cisloPeriodika
012086
n3:dodaniDat
n15:2011
n3:domaciTvurceVysledku
n4:4009991 n4:6680283 n4:1037749 n4:1834282
n3:druhVysledku
n16:J
n3:duvernostUdaju
n14:S
n3:entitaPredkladatele
n19:predkladatel
n3:idSjednocenehoVysledku
271948
n3:idVysledku
RIV/00216224:14310/10:00045417
n3:jazykVysledku
n7:eng
n3:klicovaSlova
Quantum Dots; Semiconductor Compounds; Mechanical properties of nanoscale systems
n3:klicoveSlovo
n6:Quantum%20Dots n6:Semiconductor%20Compounds n6:Mechanical%20properties%20of%20nanoscale%20systems
n3:kodStatuVydavatele
GB - Spojené království Velké Británie a Severního Irska
n3:kontrolniKodProRIV
[1CAB2107A2E9]
n3:nazevZdroje
Journal of Physics: Conference Series
n3:obor
n17:BM
n3:pocetDomacichTvurcuVysledku
4
n3:pocetTvurcuVysledku
4
n3:projekt
n10:GA202%2F09%2F0676
n3:rokUplatneniVysledku
n15:2010
n3:svazekPeriodika
244
n3:tvurceVysledku
Klenovský, Petr Křápek, Vlastimil Munzar, Dominik Humlíček, Josef
n3:zamer
n5:MSM0021622410
s:issn
1742-6588
s:numberOfPages
4
n12:organizacniJednotka
14310