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Statements

Subject Item
n2:RIV%2F00216224%3A14310%2F10%3A00045413%21RIV11-GA0-14310___
rdf:type
n9:Vysledek skos:Concept
dcterms:description
The electronic structure of InAs quantum dots covered with the GaAs1-ySby strain reducing layer has been studied using the k.p theory. We explain previous experimental observations of the red shift of the photoluminescence emission with increasing y and its blue shift with increasing excitation power. For y>0.19, type-II dots are formed with holes localized in the GaAsSb close to the dot base; two segments at the opposite sides of the dot, forming molecular-like states, result from the piezoelectric field. We also propose an experiment that could be used to identify the hole localization using a vertical electric field. The electronic structure of InAs quantum dots covered with the GaAs1-ySby strain reducing layer has been studied using the k.p theory. We explain previous experimental observations of the red shift of the photoluminescence emission with increasing y and its blue shift with increasing excitation power. For y>0.19, type-II dots are formed with holes localized in the GaAsSb close to the dot base; two segments at the opposite sides of the dot, forming molecular-like states, result from the piezoelectric field. We also propose an experiment that could be used to identify the hole localization using a vertical electric field.
dcterms:title
Electronic structure of InAs quantum dots with GaAsSb strain reducing layer: Localization of holes and its effect on the optical properties Electronic structure of InAs quantum dots with GaAsSb strain reducing layer: Localization of holes and its effect on the optical properties
skos:prefLabel
Electronic structure of InAs quantum dots with GaAsSb strain reducing layer: Localization of holes and its effect on the optical properties Electronic structure of InAs quantum dots with GaAsSb strain reducing layer: Localization of holes and its effect on the optical properties
skos:notation
RIV/00216224:14310/10:00045413!RIV11-GA0-14310___
n5:aktivita
n7:Z n7:S n7:P
n5:aktivity
P(GA202/09/0676), S, Z(MSM0021622410)
n5:cisloPeriodika
203107
n5:dodaniDat
n12:2011
n5:domaciTvurceVysledku
n8:1834282 n8:6680283 n8:1037749
n5:druhVysledku
n13:J
n5:duvernostUdaju
n11:S
n5:entitaPredkladatele
n18:predkladatel
n5:idSjednocenehoVysledku
256787
n5:idVysledku
RIV/00216224:14310/10:00045413
n5:jazykVysledku
n17:eng
n5:klicovaSlova
band structure; gallium arsenide; gallium compounds; III-V semiconductors; indium compounds; k.p calculations; photoluminescence; red shift; semiconductor quantum dots
n5:klicoveSlovo
n6:gallium%20compounds n6:band%20structure n6:photoluminescence n6:semiconductor%20quantum%20dots n6:indium%20compounds n6:red%20shift n6:III-V%20semiconductors n6:k.p%20calculations n6:gallium%20arsenide
n5:kodStatuVydavatele
US - Spojené státy americké
n5:kontrolniKodProRIV
[CC8FF52C8744]
n5:nazevZdroje
Applied Physics Letters
n5:obor
n14:BM
n5:pocetDomacichTvurcuVysledku
3
n5:pocetTvurcuVysledku
4
n5:projekt
n19:GA202%2F09%2F0676
n5:rokUplatneniVysledku
n12:2010
n5:svazekPeriodika
97
n5:tvurceVysledku
Klenovský, Petr Křápek, Vlastimil Munzar, Dominik Humlíček, Josef
n5:wos
000284545200055
n5:zamer
n16:MSM0021622410
s:issn
0003-6951
s:numberOfPages
3
n4:organizacniJednotka
14310