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Statements

Subject Item
n2:RIV%2F00216224%3A14310%2F09%3A00028516%21RIV10-MSM-14310___
rdf:type
n18:Vysledek skos:Concept
dcterms:description
Silicon-doped diamond-like carbon (DLC-Si) was prepared by plasma-enhanced chemical vapor deposition (PECVD) technique from a mixture of hexamethyldisiloxane (HMDSO) and oxygen using dual frequenci capacitive discharge. Time of flight mass spectrometer equipped with nitrogen laser (337 nm) was used to charakterize its structure via laser ablation. Stoichometry of positively or negatively charged species was confirmed via isotopic pattern simulation. DLC-Si material shows typical spectral patterns similar to those diamond-like carbon. In addition, chemical bound of Si-C in this material was proved and many positively or negatively charged O(m)Si(n)C(o)H(p) species were identified in plasma plume. Silicon-doped diamond-like carbon (DLC-Si) was prepared by plasma-enhanced chemical vapor deposition (PECVD) technique from a mixture of hexamethyldisiloxane (HMDSO) and oxygen using dual frequenci capacitive discharge. Time of flight mass spectrometer equipped with nitrogen laser (337 nm) was used to charakterize its structure via laser ablation. Stoichometry of positively or negatively charged species was confirmed via isotopic pattern simulation. DLC-Si material shows typical spectral patterns similar to those diamond-like carbon. In addition, chemical bound of Si-C in this material was proved and many positively or negatively charged O(m)Si(n)C(o)H(p) species were identified in plasma plume.
dcterms:title
Laser ablation time-of-flight mass spectrometry (LA-TOF-MS) of silicon doped diamond-like carbon (DLC-Si) Laser ablation time-of-flight mass spectrometry (LA-TOF-MS) of silicon doped diamond-like carbon (DLC-Si)
skos:prefLabel
Laser ablation time-of-flight mass spectrometry (LA-TOF-MS) of silicon doped diamond-like carbon (DLC-Si) Laser ablation time-of-flight mass spectrometry (LA-TOF-MS) of silicon doped diamond-like carbon (DLC-Si)
skos:notation
RIV/00216224:14310/09:00028516!RIV10-MSM-14310___
n3:aktivita
n4:S n4:P n4:Z
n3:aktivity
P(GA202/07/1669), P(KAN311610701), S, Z(MSM4977751303)
n3:dodaniDat
n10:2010
n3:domaciTvurceVysledku
n11:2939096 n11:6955231 n11:5823803
n3:druhVysledku
n14:D
n3:duvernostUdaju
n22:S
n3:entitaPredkladatele
n8:predkladatel
n3:idSjednocenehoVysledku
323244
n3:idVysledku
RIV/00216224:14310/09:00028516
n3:jazykVysledku
n12:eng
n3:klicovaSlova
Laser ablation; time-of-flight mass spectrometry; silicon doped diamond-like carbon
n3:klicoveSlovo
n7:Laser%20ablation n7:silicon%20doped%20diamond-like%20carbon n7:time-of-flight%20mass%20spectrometry
n3:kontrolniKodProRIV
[73E8178A4886]
n3:mistoKonaniAkce
Blansko, Czech Republic
n3:mistoVydani
Brno
n3:nazevZdroje
Frontiers in Low Temperature Plasma Diagnostics 8
n3:obor
n20:BM
n3:pocetDomacichTvurcuVysledku
3
n3:pocetTvurcuVysledku
3
n3:projekt
n9:KAN311610701 n9:GA202%2F07%2F1669
n3:rokUplatneniVysledku
n10:2009
n3:tvurceVysledku
Havel, Josef Houška, Jan Buršíková, Vilma
n3:typAkce
n17:WRD
n3:zahajeniAkce
2009-04-19+02:00
n3:zamer
n15:MSM4977751303
s:numberOfPages
1
n21:hasPublisher
JČMF
n5:isbn
978-80-214-3875-0
n19:organizacniJednotka
14310