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Namespace Prefixes

PrefixIRI
dctermshttp://purl.org/dc/terms/
n9http://localhost/temp/predkladatel/
n6http://linked.opendata.cz/resource/domain/vavai/riv/tvurce/
n7http://linked.opendata.cz/ontology/domain/vavai/
n15http://linked.opendata.cz/resource/domain/vavai/zamer/
skoshttp://www.w3.org/2004/02/skos/core#
n4http://linked.opendata.cz/ontology/domain/vavai/riv/
n14http://linked.opendata.cz/resource/domain/vavai/vysledek/RIV%2F00216224%3A14310%2F08%3A00038410%21RIV10-MSM-14310___/
n2http://linked.opendata.cz/resource/domain/vavai/vysledek/
rdfhttp://www.w3.org/1999/02/22-rdf-syntax-ns#
n10http://linked.opendata.cz/ontology/domain/vavai/riv/klicoveSlovo/
n16http://linked.opendata.cz/ontology/domain/vavai/riv/duvernostUdaju/
xsdhhttp://www.w3.org/2001/XMLSchema#
n17http://linked.opendata.cz/ontology/domain/vavai/riv/aktivita/
n11http://linked.opendata.cz/ontology/domain/vavai/riv/jazykVysledku/
n13http://linked.opendata.cz/ontology/domain/vavai/riv/druhVysledku/
n5http://linked.opendata.cz/ontology/domain/vavai/riv/obor/
n12http://reference.data.gov.uk/id/gregorian-year/

Statements

Subject Item
n2:RIV%2F00216224%3A14310%2F08%3A00038410%21RIV10-MSM-14310___
rdf:type
n7:Vysledek skos:Concept
dcterms:description
Aurora ELK low-k films, deposited using a PECVD porogen-based process, were treated with 35 s of He/H2 downstream-plasma (DSP) at varied temperatures of 25 C, 200 C, 300 C and 350 C. The plasma modifications were investigated using various physical-chemical methods. Results showed that extended He/H2 DSP plasma exposure at elevated temperature may lead to k-value reduction due to porosity increase without hydrophilisation of the modified layer. Improvement in dielectric constant is accompanied by a small reduction of mechanical strength. The porosity increase was related to removal of porogen residues formed during the ultra-violet (UV) curing. The porogen residue removal signature was reflected in the optical properties in the UV range and the C-depth profile of the investigated low-k material. Aurora ELK low-k films, deposited using a PECVD porogen-based process, were treated with 35 s of He/H2 downstream-plasma (DSP) at varied temperatures of 25 C, 200 C, 300 C and 350 C. The plasma modifications were investigated using various physical-chemical methods. Results showed that extended He/H2 DSP plasma exposure at elevated temperature may lead to k-value reduction due to porosity increase without hydrophilisation of the modified layer. Improvement in dielectric constant is accompanied by a small reduction of mechanical strength. The porosity increase was related to removal of porogen residues formed during the ultra-violet (UV) curing. The porogen residue removal signature was reflected in the optical properties in the UV range and the C-depth profile of the investigated low-k material.
dcterms:title
Improved low-k dielectric properties using He/H2 plasma for resist removal Improved low-k dielectric properties using He/H2 plasma for resist removal
skos:prefLabel
Improved low-k dielectric properties using He/H2 plasma for resist removal Improved low-k dielectric properties using He/H2 plasma for resist removal
skos:notation
RIV/00216224:14310/08:00038410!RIV10-MSM-14310___
n4:aktivita
n17:Z
n4:aktivity
Z(MSM0021622410)
n4:dodaniDat
n12:2010
n4:domaciTvurceVysledku
n6:7569289
n4:druhVysledku
n13:O
n4:duvernostUdaju
n16:S
n4:entitaPredkladatele
n14:predkladatel
n4:idSjednocenehoVysledku
371695
n4:idVysledku
RIV/00216224:14310/08:00038410
n4:jazykVysledku
n11:eng
n4:klicovaSlova
low-k; strip plasma; porogen residues
n4:klicoveSlovo
n10:strip%20plasma n10:porogen%20residues n10:low-k
n4:kontrolniKodProRIV
[7C108553D7CD]
n4:obor
n5:BM
n4:pocetDomacichTvurcuVysledku
1
n4:pocetTvurcuVysledku
18
n4:rokUplatneniVysledku
n12:2008
n4:tvurceVysledku
Baklanov, Mikhail De Gendt, Stefan Kaneko, Shinya Matsushita, Kiyohiro Berry, Ivan Escorcia, Orlando Shamiryan, Denis Travaly, Youssef Sprey, Hessel Urbanowicz, Adam Maršík, Přemysl Tsui, N. Verdonck, Patrick De Roest, David Ferchichi, Abdelkarim Vanstreels, Kris Waldfried, Carlo Luo, Shijian
n4:zamer
n15:MSM0021622410
n9:organizacniJednotka
14310