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Statements

Subject Item
n2:RIV%2F00216224%3A14310%2F08%3A00026016%21RIV10-MSM-14310___
rdf:type
skos:Concept n15:Vysledek
dcterms:description
Low-k dielectrics prepared by CVD in the form of 200 nm thick layers on Si wafers were thermally treated at 410 C and irradiated using UV lamps emitting photons of different wavelengths around 172 nm, 185 nm, and 222 nm. The treatment was performed in high vacuum and under a nitrogen atmosphere at various pressures ranging from 0.1 mbar up to 700 mbar. Subsequently, the samples were investigated using FTIR transmission spectroscopy, contact angle measurement, X-ray photoelectron spectrometry (XPS), time-of-flight secondary ion mass spectrometry (TOF-SIMS), X-ray reflectometry (XRR), surface acoustic wave spectrometry (SAW), and purged UV spectroscopic ellipsometry (PUVSE). Low-k dielectrics prepared by CVD in the form of 200 nm thick layers on Si wafers were thermally treated at 410 C and irradiated using UV lamps emitting photons of different wavelengths around 172 nm, 185 nm, and 222 nm. The treatment was performed in high vacuum and under a nitrogen atmosphere at various pressures ranging from 0.1 mbar up to 700 mbar. Subsequently, the samples were investigated using FTIR transmission spectroscopy, contact angle measurement, X-ray photoelectron spectrometry (XPS), time-of-flight secondary ion mass spectrometry (TOF-SIMS), X-ray reflectometry (XRR), surface acoustic wave spectrometry (SAW), and purged UV spectroscopic ellipsometry (PUVSE).
dcterms:title
Effect of pressure on efficiency of UV curing of CVD-derived low-k material at different wavelengths Effect of pressure on efficiency of UV curing of CVD-derived low-k material at different wavelengths
skos:prefLabel
Effect of pressure on efficiency of UV curing of CVD-derived low-k material at different wavelengths Effect of pressure on efficiency of UV curing of CVD-derived low-k material at different wavelengths
skos:notation
RIV/00216224:14310/08:00026016!RIV10-MSM-14310___
n3:aktivita
n11:Z
n3:aktivity
Z(MSM0021622410)
n3:cisloPeriodika
10
n3:dodaniDat
n16:2010
n3:domaciTvurceVysledku
n12:7569289
n3:druhVysledku
n7:J
n3:duvernostUdaju
n14:S
n3:entitaPredkladatele
n17:predkladatel
n3:idSjednocenehoVysledku
365204
n3:idVysledku
RIV/00216224:14310/08:00026016
n3:jazykVysledku
n5:eng
n3:klicovaSlova
low-k; UV curing
n3:klicoveSlovo
n10:UV%20curing n10:low-k
n3:kodStatuVydavatele
DE - Spolková republika Německo
n3:kontrolniKodProRIV
[9A27B02C9F68]
n3:nazevZdroje
Microelectronic Engineering
n3:obor
n4:BM
n3:pocetDomacichTvurcuVysledku
1
n3:pocetTvurcuVysledku
10
n3:rokUplatneniVysledku
n16:2008
n3:svazekPeriodika
85
n3:tvurceVysledku
Verdonck, Patrick Buchmeiser, M. R. Gerlach, J. W. Maršík, Přemysl Prager, Lutz Naumov, S. Pistol, L. Wennrich, L. Baklanov, Mikhail Schneider, Dieter
n3:wos
000260343600038
n3:zamer
n18:MSM0021622410
s:issn
0167-9317
s:numberOfPages
4
n9:organizacniJednotka
14310