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Statements

Subject Item
n2:RIV%2F00216224%3A14310%2F07%3A00025614%21RIV10-MSM-14310___
rdf:type
skos:Concept n21:Vysledek
dcterms:description
We report on far-infrared ellipsometric measurements of Si:P with the phosphorus concentration at the metal-insulator (MI) transition, for temperatures from 15 to 300 K in the 50-600 cm-1 spectral range. Temperature coefficients of the complex conductivity have been measured with high resolution; they reveal a nontrivial evolution of the optical response. We report on far-infrared ellipsometric measurements of Si:P with the phosphorus concentration at the metal-insulator (MI) transition, for temperatures from 15 to 300 K in the 50-600 cm-1 spectral range. Temperature coefficients of the complex conductivity have been measured with high resolution; they reveal a nontrivial evolution of the optical response.
dcterms:title
Frequency- and temperature-dependent conductivity at the metal-insulator transition in phosphorus doped silicon studied by far-infrared ellipsometry Frequency- and temperature-dependent conductivity at the metal-insulator transition in phosphorus doped silicon studied by far-infrared ellipsometry
skos:prefLabel
Frequency- and temperature-dependent conductivity at the metal-insulator transition in phosphorus doped silicon studied by far-infrared ellipsometry Frequency- and temperature-dependent conductivity at the metal-insulator transition in phosphorus doped silicon studied by far-infrared ellipsometry
skos:notation
RIV/00216224:14310/07:00025614!RIV10-MSM-14310___
n4:aktivita
n8:Z
n4:aktivity
Z(MSM0021622410)
n4:dodaniDat
n14:2010
n4:domaciTvurceVysledku
n9:7569289 n9:1647652 n9:1037749 n9:1834282
n4:druhVysledku
n17:D
n4:duvernostUdaju
n13:S
n4:entitaPredkladatele
n5:predkladatel
n4:idSjednocenehoVysledku
422625
n4:idVysledku
RIV/00216224:14310/07:00025614
n4:jazykVysledku
n16:eng
n4:klicovaSlova
metal-insulator transition; doped silicon; ellipsometry
n4:klicoveSlovo
n15:doped%20silicon n15:metal-insulator%20transition n15:ellipsometry
n4:kontrolniKodProRIV
[A4BB03E7D962]
n4:mistoKonaniAkce
Vienna
n4:mistoVydani
USA
n4:nazevZdroje
CP893, Physics of Semiconductors, 28th International Conference
n4:obor
n18:BM
n4:pocetDomacichTvurcuVysledku
4
n4:pocetTvurcuVysledku
6
n4:rokUplatneniVysledku
n14:2007
n4:tvurceVysledku
Bernhard, Christian Humlíček, Josef Munzar, Dominik Dubroka, Adam Maršík, Přemysl Boris, A. V.
n4:typAkce
n12:WRD
n4:wos
000246281800016
n4:zahajeniAkce
2006-01-01+01:00
n4:zamer
n11:MSM0021622410
s:numberOfPages
2
n10:hasPublisher
American Institute of Physics
n19:isbn
978-0-7354-0397-0
n3:organizacniJednotka
14310