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Statements

Subject Item
n2:RIV%2F00216224%3A14310%2F07%3A00022272%21RIV10-MSM-14310___
rdf:type
skos:Concept n17:Vysledek
dcterms:description
Thin organosilicon and silicon oxide films were deposited in r.f. capacitively coupled discharges from a mixture of hexamethyldisiloxane (HMDSO) and oxygen. The concentration of HMDSO was in the range 5-17%. Even for such relatively high dilution of HMDSO the organic-inorganic crossover of the film character was observed due to changes of the HMDSO concentration, but other factors, such as pressure and d.c. self-bias should also be taken into account. When annealed the films changed their composition, chemical structure and mechanical properties. We observed desorption of water, methane and CO or CO2 from the SiO2-like films. The hardness of the SiO2-like film, containing 5% carbon and 25% hydrogen, increased with the increase of annealing temperature from 5.9 (as deposited) to 11.3 GPa (500 oC). Simultaneously, its fracture toughness was significantly improved. These effects were explained by dehydration and cross-linking of the film. Thin organosilicon and silicon oxide films were deposited in r.f. capacitively coupled discharges from a mixture of hexamethyldisiloxane (HMDSO) and oxygen. The concentration of HMDSO was in the range 5-17%. Even for such relatively high dilution of HMDSO the organic-inorganic crossover of the film character was observed due to changes of the HMDSO concentration, but other factors, such as pressure and d.c. self-bias should also be taken into account. When annealed the films changed their composition, chemical structure and mechanical properties. We observed desorption of water, methane and CO or CO2 from the SiO2-like films. The hardness of the SiO2-like film, containing 5% carbon and 25% hydrogen, increased with the increase of annealing temperature from 5.9 (as deposited) to 11.3 GPa (500 oC). Simultaneously, its fracture toughness was significantly improved. These effects were explained by dehydration and cross-linking of the film.
dcterms:title
Organosilicon thin films deposited by plasma enhanced CVD: Thermal changes of chemical structure and mechanical properties Organosilicon thin films deposited by plasma enhanced CVD: Thermal changes of chemical structure and mechanical properties
skos:prefLabel
Organosilicon thin films deposited by plasma enhanced CVD: Thermal changes of chemical structure and mechanical properties Organosilicon thin films deposited by plasma enhanced CVD: Thermal changes of chemical structure and mechanical properties
skos:notation
RIV/00216224:14310/07:00022272!RIV10-MSM-14310___
n3:aktivita
n9:P n9:Z
n3:aktivity
P(1K05025), P(GA202/07/1669), Z(AV0Z10480505), Z(MSM0021622411)
n3:cisloPeriodika
1
n3:dodaniDat
n4:2010
n3:domaciTvurceVysledku
n8:8588627 n8:8259666 n8:1462202 n8:4205448 n8:5823803 n8:9699414
n3:druhVysledku
n11:J
n3:duvernostUdaju
n13:S
n3:entitaPredkladatele
n15:predkladatel
n3:idSjednocenehoVysledku
440026
n3:idVysledku
RIV/00216224:14310/07:00022272
n3:jazykVysledku
n19:eng
n3:klicovaSlova
Thin films; Organometallic compounds; Plasma deposition; Infrared spectroscopy; Mechanical properties
n3:klicoveSlovo
n12:Plasma%20deposition n12:Mechanical%20properties n12:Infrared%20spectroscopy n12:Thin%20films n12:Organometallic%20compounds
n3:kodStatuVydavatele
US - Spojené státy americké
n3:kontrolniKodProRIV
[6B60752CD149]
n3:nazevZdroje
Journal of Physics and Chemistry of Solids
n3:obor
n10:BL
n3:pocetDomacichTvurcuVysledku
6
n3:pocetTvurcuVysledku
7
n3:projekt
n14:GA202%2F07%2F1669 n14:1K05025
n3:rokUplatneniVysledku
n4:2007
n3:svazekPeriodika
68
n3:tvurceVysledku
Macková, Anna Buršíková, Vilma Zajíčková, Lenka Peřina, Vratislav Studýnková, Zuzana Sťahel, Pavel Franclová, Jana
n3:zamer
n16:MSM0021622411 n16:AV0Z10480505
s:issn
0022-3697
s:numberOfPages
5
n18:organizacniJednotka
14310