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Statements

Subject Item
n2:RIV%2F00216224%3A14310%2F07%3A00022256%21RIV10-MSM-14310___
rdf:type
n6:Vysledek skos:Concept
dcterms:description
We have performed a comparative study of the properties of films deposited in the rf CCP discharges from a mixture of 5% of hexamethyldisiloxane in oxygen at two different pressures 2.5 and 40 Pa in continuous and pulsed modes. Changes in optical and especially mechanical properties of the films were observed due to differing pressure. Slight changes in the properties were also achieved by pulsing the discharge. Films deposited at 2.5 Pa exhibited very low compressive stress and hardness from 5.5 to 6.9 GPa. Soft films of 1.6 GPa maximum hardness possessing a tensile stress and containing more CH3-related groups were deposited at a pressure of 40 Pa. Hard SiO2-like films (11-13.5 GPa) were deposited from the same mixture in the ICP mode of a helicon reactor at the pressure of 0.3 Pa at which the CCP discharge could not be sustained. These films possessed relatively high compressive stress. Increasing off-time up to 15 ms caused a slight decrease in the hardness and in the case of 0. We have performed a comparative study of the properties of films deposited in the rf CCP discharges from a mixture of 5% of hexamethyldisiloxane in oxygen at two different pressures 2.5 and 40 Pa in continuous and pulsed modes. Changes in optical and especially mechanical properties of the films were observed due to differing pressure. Slight changes in the properties were also achieved by pulsing the discharge. Films deposited at 2.5 Pa exhibited very low compressive stress and hardness from 5.5 to 6.9 GPa. Soft films of 1.6 GPa maximum hardness possessing a tensile stress and containing more CH3-related groups were deposited at a pressure of 40 Pa. Hard SiO2-like films (11-13.5 GPa) were deposited from the same mixture in the ICP mode of a helicon reactor at the pressure of 0.3 Pa at which the CCP discharge could not be sustained. These films possessed relatively high compressive stress. Increasing off-time up to 15 ms caused a slight decrease in the hardness and in the case of 0.
dcterms:title
Comparative Study of Films Deposited from HMDSO/O2 in Continuous Wave and Pulsed rf Discharges Comparative Study of Films Deposited from HMDSO/O2 in Continuous Wave and Pulsed rf Discharges
skos:prefLabel
Comparative Study of Films Deposited from HMDSO/O2 in Continuous Wave and Pulsed rf Discharges Comparative Study of Films Deposited from HMDSO/O2 in Continuous Wave and Pulsed rf Discharges
skos:notation
RIV/00216224:14310/07:00022256!RIV10-MSM-14310___
n3:aktivita
n4:Z n4:P
n3:aktivity
P(1K05025), Z(AV0Z20410507), Z(MSM0021622411)
n3:cisloPeriodika
S1
n3:dodaniDat
n8:2010
n3:domaciTvurceVysledku
n5:9412921 n5:5823803 n5:4205448 n5:6334008
n3:druhVysledku
n13:J
n3:duvernostUdaju
n19:S
n3:entitaPredkladatele
n11:predkladatel
n3:idSjednocenehoVysledku
414255
n3:idVysledku
RIV/00216224:14310/07:00022256
n3:jazykVysledku
n14:eng
n3:klicovaSlova
PECVD; hexamethyldisiloxane; oxygen; CCP; ICP
n3:klicoveSlovo
n10:oxygen n10:hexamethyldisiloxane n10:CCP n10:ICP n10:PECVD
n3:kodStatuVydavatele
DE - Spolková republika Německo
n3:kontrolniKodProRIV
[697236911E81]
n3:nazevZdroje
Plasma Processes and Polymers
n3:obor
n17:BL
n3:pocetDomacichTvurcuVysledku
4
n3:pocetTvurcuVysledku
7
n3:projekt
n18:1K05025
n3:rokUplatneniVysledku
n8:2007
n3:svazekPeriodika
4
n3:tvurceVysledku
Granier, Agnes Zajíčková, Lenka Buršíková, Vilma Franta, Daniel Buršík, Jiří Goullet, Antoine Bousquet, Angelique
n3:zamer
n9:AV0Z20410507 n9:MSM0021622411
s:issn
1612-8850
s:numberOfPages
7
n15:organizacniJednotka
14310