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Statements

Subject Item
n2:RIV%2F00216224%3A14310%2F07%3A00021888%21RIV10-MSM-14310___
rdf:type
n17:Vysledek skos:Concept
dcterms:description
We report on photoluminescence of a series of vertically stacked multilayer quantum dot structures. Our analysis of the data taken at different excitation powers and in the magnetic field up to 24T yields a useful insight into the electronic structure of the InAs/GaAs quantum dot structures. The data are compared with results of model electronic structure calculations for flat dots, including the effects of the strain field. The calculations suggest that the difference between the energies of the ground and first excited transitions is mainly determined by the lateral dimensions of the dots. A comparison of the experimental results with the theoretical ones reveals an increase of the dot dimensions (both height and diameter) and a decrease of the aspect ratio (height/diameter) with increasing number of the quantum dot layers. For seven layer samples, the wavelength of 1:3 mm has been achieved. We report on photoluminescence of a series of vertically stacked multilayer quantum dot structures. Our analysis of the data taken at different excitation powers and in the magnetic field up to 24T yields a useful insight into the electronic structure of the InAs/GaAs quantum dot structures. The data are compared with results of model electronic structure calculations for flat dots, including the effects of the strain field. The calculations suggest that the difference between the energies of the ground and first excited transitions is mainly determined by the lateral dimensions of the dots. A comparison of the experimental results with the theoretical ones reveals an increase of the dot dimensions (both height and diameter) and a decrease of the aspect ratio (height/diameter) with increasing number of the quantum dot layers. For seven layer samples, the wavelength of 1:3 mm has been achieved.
dcterms:title
Photoluminescence and magnetophotoluminescence of vertically stacked InAs/GaAs quantum dot structures Photoluminescence and magnetophotoluminescence of vertically stacked InAs/GaAs quantum dot structures
skos:prefLabel
Photoluminescence and magnetophotoluminescence of vertically stacked InAs/GaAs quantum dot structures Photoluminescence and magnetophotoluminescence of vertically stacked InAs/GaAs quantum dot structures
skos:notation
RIV/00216224:14310/07:00021888!RIV10-MSM-14310___
n3:aktivita
n15:Z
n3:aktivity
Z(MSM0021622410)
n3:cisloPeriodika
1
n3:dodaniDat
n5:2010
n3:domaciTvurceVysledku
n18:4009991 n18:1834282
n3:druhVysledku
n10:J
n3:duvernostUdaju
n16:S
n3:entitaPredkladatele
n13:predkladatel
n3:idSjednocenehoVysledku
441258
n3:idVysledku
RIV/00216224:14310/07:00021888
n3:jazykVysledku
n7:eng
n3:klicovaSlova
self-assembled quantum dots; photoluminescence; magnetophotoluminescence
n3:klicoveSlovo
n14:self-assembled%20quantum%20dots n14:magnetophotoluminescence n14:photoluminescence
n3:kodStatuVydavatele
NL - Nizozemsko
n3:kontrolniKodProRIV
[BAE2F700184A]
n3:nazevZdroje
Physica E
n3:obor
n8:BM
n3:pocetDomacichTvurcuVysledku
2
n3:pocetTvurcuVysledku
4
n3:rokUplatneniVysledku
n5:2007
n3:svazekPeriodika
36
n3:tvurceVysledku
Křápek, Vlastimil Humlíček, Josef Kuldová, Karla Hospodková, Alice
n3:zamer
n12:MSM0021622410
s:issn
1386-9477
s:numberOfPages
8
n6:organizacniJednotka
14310