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Statements

Subject Item
n2:RIV%2F00216224%3A14310%2F06%3A00017520%21RIV10-MSM-14310___
rdf:type
n17:Vysledek skos:Concept
dcterms:description
Rocking curve imaging is based on measuring a series of Bragg-reflection digital topographs by monochromatic parallel-beam synchrotron radiation in order to quantify local crystal lattice rotations within a large surface area with high angular and high spatial resolution. In this paper we apply the method to map local lattice tilts in two distinct semiconductor sample types with lattice misorientations up to 0.5 deg and with spatial resolution from 30 um down to 1 um. We analyse the measured surface-tilt data volumes for samples with almost smoothly varying specific misoriented defect formation in GaAs wafers and for an inherent subsurface grain structure of epitaxial lateral overgrowth wings in GaN. Back-projected tilt maps and histograms provide both local and global characteristics of the microcrystallinity. Rocking curve imaging is based on measuring a series of Bragg-reflection digital topographs by monochromatic parallel-beam synchrotron radiation in order to quantify local crystal lattice rotations within a large surface area with high angular and high spatial resolution. In this paper we apply the method to map local lattice tilts in two distinct semiconductor sample types with lattice misorientations up to 0.5 deg and with spatial resolution from 30 um down to 1 um. We analyse the measured surface-tilt data volumes for samples with almost smoothly varying specific misoriented defect formation in GaAs wafers and for an inherent subsurface grain structure of epitaxial lateral overgrowth wings in GaN. Back-projected tilt maps and histograms provide both local and global characteristics of the microcrystallinity.
dcterms:title
Crystallite misorientation analysis in semiconductor wafers and ELO samples by rocking curve imaging Crystallite misorientation analysis in semiconductor wafers and ELO samples by rocking curve imaging
skos:prefLabel
Crystallite misorientation analysis in semiconductor wafers and ELO samples by rocking curve imaging Crystallite misorientation analysis in semiconductor wafers and ELO samples by rocking curve imaging
skos:notation
RIV/00216224:14310/06:00017520!RIV10-MSM-14310___
n3:aktivita
n8:Z
n3:aktivity
Z(MSM0021622410)
n3:cisloPeriodika
1
n3:dodaniDat
n16:2010
n3:domaciTvurceVysledku
n11:2966174
n3:druhVysledku
n9:J
n3:duvernostUdaju
n7:S
n3:entitaPredkladatele
n12:predkladatel
n3:idSjednocenehoVysledku
470056
n3:idVysledku
RIV/00216224:14310/06:00017520
n3:jazykVysledku
n15:eng
n3:klicovaSlova
X-ray diffraction; X-ray topography; Microdiffraction; Crystal growth; Microstructure; GaAs; GaN
n3:klicoveSlovo
n4:X-ray%20topography n4:Microstructure n4:GaAs n4:X-ray%20diffraction n4:Crystal%20growth n4:Microdiffraction n4:GaN
n3:kodStatuVydavatele
DE - Spolková republika Německo
n3:kontrolniKodProRIV
[1555E13EB509]
n3:nazevZdroje
Applied Surface Science
n3:obor
n10:BM
n3:pocetDomacichTvurcuVysledku
1
n3:pocetTvurcuVysledku
5
n3:rokUplatneniVysledku
n16:2006
n3:svazekPeriodika
253
n3:tvurceVysledku
Mikulík, Petr Helfen, L. Pernot, P. Lübbert, D. Baumbach, T.
n3:zamer
n14:MSM0021622410
s:issn
0169-4332
s:numberOfPages
6
n18:organizacniJednotka
14310