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Statements

Subject Item
n2:RIV%2F00216224%3A14310%2F05%3A00015079%21RIV10-MSM-14310___
rdf:type
skos:Concept n17:Vysledek
dcterms:description
In this paper the results of the atomic force microscopy analysis of the upper boundaries of the GaN nucleation and buffer films prepared by MOCVD are presented. It is shown that the upper boundaries of nucleation films exhibit morphology identical with statistical roughness. The values of the basic statistical roughness quantities, i.e. the RMS values of the heights and the autocorrelation length values, of these boundaries are determined in dependences on time and temperature of their annealing. These RMS values decrease with increasing values of both technological parameters. It is also found that the corresponding power spectral density functions of the upper boundaries of these films satisfy the Gaussian function very well. Furthermore, it is shown that the GaN buffer films created onto the selected nucleation film have the upper boundaries whose morphology is different from the typical statistical surface roughness. In this paper the results of the atomic force microscopy analysis of the upper boundaries of the GaN nucleation and buffer films prepared by MOCVD are presented. It is shown that the upper boundaries of nucleation films exhibit morphology identical with statistical roughness. The values of the basic statistical roughness quantities, i.e. the RMS values of the heights and the autocorrelation length values, of these boundaries are determined in dependences on time and temperature of their annealing. These RMS values decrease with increasing values of both technological parameters. It is also found that the corresponding power spectral density functions of the upper boundaries of these films satisfy the Gaussian function very well. Furthermore, it is shown that the GaN buffer films created onto the selected nucleation film have the upper boundaries whose morphology is different from the typical statistical surface roughness.
dcterms:title
Atomic force microscopy analysis of morphology of the upper boundaries of GaN thin films prepared by MOCVD Atomic force microscopy analysis of morphology of the upper boundaries of GaN thin films prepared by MOCVD
skos:prefLabel
Atomic force microscopy analysis of morphology of the upper boundaries of GaN thin films prepared by MOCVD Atomic force microscopy analysis of morphology of the upper boundaries of GaN thin films prepared by MOCVD
skos:notation
RIV/00216224:14310/05:00015079!RIV10-MSM-14310___
n3:aktivita
n10:Z
n3:aktivity
Z(MSM 143100003)
n3:cisloPeriodika
1-3
n3:dodaniDat
n5:2010
n3:domaciTvurceVysledku
n12:2260387 n12:2026384
n3:druhVysledku
n4:J
n3:duvernostUdaju
n6:S
n3:entitaPredkladatele
n13:predkladatel
n3:idSjednocenehoVysledku
513288
n3:idVysledku
RIV/00216224:14310/05:00015079
n3:jazykVysledku
n16:eng
n3:klicovaSlova
Roughness; AFM; GaN films
n3:klicoveSlovo
n9:AFM n9:Roughness n9:GaN%20films
n3:kodStatuVydavatele
GB - Spojené království Velké Británie a Severního Irska
n3:kontrolniKodProRIV
[FA9E5A0DD26B]
n3:nazevZdroje
Vacuum
n3:obor
n15:BM
n3:pocetDomacichTvurcuVysledku
2
n3:pocetTvurcuVysledku
5
n3:rokUplatneniVysledku
n5:2005
n3:svazekPeriodika
80
n3:tvurceVysledku
Klapetek, Petr Bonnanni, Alberta Montaigne Ramil, Alberto Ohlídal, Ivan Sitter, Helmut
n3:zamer
n14:MSM%20143100003
s:issn
0042-207X
s:numberOfPages
5
n18:organizacniJednotka
14310